Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO2 current blocking layer

Jae Seong Park, Jaecheon Han, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)


Abstract GaN-based light-emitting diodes (LEDs) fabricated with Ag particles embedded within a SiO2 current blocking layer (CBL) are demonstrated. The Ag particles varied from 100 to 250 nm in size, and had a density of ∼3.8 × 108 cm-2. The transmittances obtained from GaN/sapphire and Ag particles/GaN/sapphire were 75 and 66% at 450 nm, respectively. The LEDs (chip size: 1000 × 1000 μm2) fabricated with ITO-only, ITO/SiO2 CBL, and ITO/Ag particles/SiO2 CBL showed forward-bias voltages of 3.05, 3.25 and 3.1 V at 20 mA, respectively. The LEDs with the ITO/Ag particles/SiO2 CBL yielded 11.9 and 7.0% higher light output powers (at 20 mA) than the LEDs with the ITO-only and ITO/SiO2 CBL, respectively. The improved output power is explained by the combined effects of the improved extraction and current spreading.

Original languageEnglish
Article number3674
Pages (from-to)361-366
Number of pages6
JournalSuperlattices and Microstructures
Publication statusPublished - 2015 Jul 1



  • Ag particle
  • Current spreading
  • Extraction
  • LED

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

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