Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector

Jae Seong Park, Jaecheon Han, Jae Woong Han, Heonjin Seo, Jung Tak Oh, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on the improved performance of near-ultraviolet (385 nm) InGaN/GaN multi-quantum well light emitting diodes (LEDs) by enhancing the thermal and electrical properties of Ag-based reflector. It is shown that after annealing at 500 °C, indium (In)-overlaid Ag contact exhibits considerably higher reflectivity at 385 nm than Ag only contact. After annealing at 500°C, both the Ag only and In-overlaid Ag contacts are ohmic with a specific contact resistance of 6.7 × 10-4 and 8.7 × 10-5 Ω cm2, respectively. Near-UV (385 nm) LEDs fabricated with annealed Ag only and In-overlaid Ag reflectors show a forward-bias voltage of 3.4 and 3.37 V at an injection current of 20 mA, respectively. The LEDs with the annealed In-overlaid Ag reflector exhibit 24.7% higher light output power (at 20 mA) than the LEDs with the 500°C-annealed Ag only reflector. X-ray photoemission spectroscopy was performed to understand the improved electrical properties of the In-overlaid Ag reflectors. The enhanced thermal stability of In-overlaid Ag reflector is also briefly described.

Original languageEnglish
Pages (from-to)7-14
Number of pages8
JournalSuperlattices and Microstructures
Volume64
DOIs
Publication statusPublished - 2013 Oct 14

Fingerprint

Indium
reflectors
Light emitting diodes
indium
Electric properties
light emitting diodes
Thermodynamic properties
thermodynamic properties
electrical properties
output
Annealing
annealing
Ohmic contacts
Contact resistance
Photoelectron spectroscopy
Bias voltage
X ray spectroscopy
contact resistance
Semiconductor quantum wells
Thermodynamic stability

Keywords

  • Ag ohmic reflector
  • In overlayer
  • Near-ultraviolet light-emitting diode
  • Thermal stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector. / Park, Jae Seong; Han, Jaecheon; Han, Jae Woong; Seo, Heonjin; Oh, Jung Tak; Seong, Tae Yeon.

In: Superlattices and Microstructures, Vol. 64, 14.10.2013, p. 7-14.

Research output: Contribution to journalArticle

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AU - Oh, Jung Tak

AU - Seong, Tae Yeon

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