Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

M. R. Kwon, T. H. Park, T. H. Lee, B. R. Lee, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

Original languageEnglish
Pages (from-to)215-220
Number of pages6
JournalSuperlattices and Microstructures
Volume116
DOIs
Publication statusPublished - 2018 Apr 1

Keywords

  • AlGaN
  • Deep ultraviolet light-emitting diodes
  • Electron blocking layer
  • Internal quantum efficiency

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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