Improving the thermal stability of nickel monosilicide thin films by combining annealing with the use of an interlayer and a capping layer

Bong Jun Park, Sang Yong Jeong, Jun Ho Kim, Tae Yeon Seong, Chel Jong Choi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The authors investigated the effects of preannealing a 2-nm-thick Pd interlayer and a 20-nm-thick TiN capping layer on the electrical and thermal stability of nickel silicides as a function of the annealing temperature. The preannealed samples (prepoly-Si) produce lower sheet resistances compared to the samples without preannealing. For the preannealed samples, NiSi remains stable up to 600 °C. Transmission electron microscopy results show that the preannealed samples have a higher resistance against layer inversion. The addition of a Pd interlayer at the Ni film/prepoly-Si interface increases the formation temperature of NiSi2 to 900 °C. The use of the capping layer on the Pd-interlayered prepoly-Si samples improves the electrical and morphological stabilities of NiSi. The possible mechanisms for the preannealing and interlayer-induced improvement of the thermal stabilities of the Ni-silicide samples are discussed in terms of grain growth and simple thermodynamic relations.

Original languageEnglish
Article number031503
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume29
Issue number3
DOIs
Publication statusPublished - 2011 May 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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