In As/GaAs quantum dot lasers with dots in an asymmetric In xGa1-xAs quantum well structure

W. J. Choi, J. D. Song, J. I. Lee, K. C. Kim, Tae Geun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the advantages of using InAs/GaAs quantum dots (QDs) having InxGa1-xAs asymmetric strain-released layers (ASRL) over the conventional InAs/GaAs QDs in long wavelength operation. Atomic layer molecular beam epitaxy was used to enhance the uniformity of InAs QDs in an InxGa1-xAs quantum well structure. The red shift as large as ∼50nm could be achieved by varying the thickness and indium composition of the InxGa1-xAs ASRL. We observed the longest wavelength of 1288 nm produced by the InAs/GaAs QD with ASRL by photoluminescence (PL). However, the stimulated emission gave the longest wavelength of 1206 nm, blue-shifted as large as ∼82nm from the PL peak at room temperature, which is attributed to the optical transitions via higher sub-band levels of the InAs/GaAs QDs.

Original languageEnglish
Pages (from-to)886-889
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1

Fingerprint

Quantum dot lasers
Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
lasers
Wavelength
Photoluminescence
Atomic layer epitaxy
wavelengths
photoluminescence
Stimulated emission
Indium
Optical transitions
atomic layer epitaxy
stimulated emission
optical transition
Molecular beam epitaxy
red shift
indium

Keywords

  • Dots-in-a-well
  • Laser diodes
  • Quantum dot
  • Strain relaxation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

In As/GaAs quantum dot lasers with dots in an asymmetric In xGa1-xAs quantum well structure. / Choi, W. J.; Song, J. D.; Lee, J. I.; Kim, K. C.; Kim, Tae Geun.

In: Physica B: Condensed Matter, Vol. 376-377, No. 1, 01.04.2006, p. 886-889.

Research output: Contribution to journalArticle

Choi, W. J. ; Song, J. D. ; Lee, J. I. ; Kim, K. C. ; Kim, Tae Geun. / In As/GaAs quantum dot lasers with dots in an asymmetric In xGa1-xAs quantum well structure. In: Physica B: Condensed Matter. 2006 ; Vol. 376-377, No. 1. pp. 886-889.
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AU - Kim, Tae Geun

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