In As/GaAs quantum dot lasers with dots in an asymmetric In xGa1-xAs quantum well structure

W. J. Choi, J. D. Song, J. I. Lee, K. C. Kim, T. G. Kim

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

We report the advantages of using InAs/GaAs quantum dots (QDs) having InxGa1-xAs asymmetric strain-released layers (ASRL) over the conventional InAs/GaAs QDs in long wavelength operation. Atomic layer molecular beam epitaxy was used to enhance the uniformity of InAs QDs in an InxGa1-xAs quantum well structure. The red shift as large as ∼50nm could be achieved by varying the thickness and indium composition of the InxGa1-xAs ASRL. We observed the longest wavelength of 1288 nm produced by the InAs/GaAs QD with ASRL by photoluminescence (PL). However, the stimulated emission gave the longest wavelength of 1206 nm, blue-shifted as large as ∼82nm from the PL peak at room temperature, which is attributed to the optical transitions via higher sub-band levels of the InAs/GaAs QDs.

Original languageEnglish
Pages (from-to)886-889
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • Dots-in-a-well
  • Laser diodes
  • Quantum dot
  • Strain relaxation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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