In depth characterization of electron transport in 14 nm FD-SOI CMOS devices

Ming Shi, Minju Shin, Mireille Mouis, Antoine Cros, Emmanuel Josse, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, carrier transport properties in highly scaled (down to 14 nm-node) FDSOI CMOS devices are presented from 77 K to 300 K. At first, we analyzed electron transport characteristics in terms of different gate-oxide stack in NMOS long devices. So, we found that SOP and RCS can be the dominant contribution of additional mobility scatterings in different temperature regions. Then, electron mobility degradation in short channel devices was deeply investigated. It can be stemmed from additional scattering mechanisms, which were attributed to process-induced defects near source and drain. Finally, we found that mobility enhancement by replacing Si to SiGe channel in PMOS devices was validated and this feature was not effective anymore in sub-100 nm devices. The critical lengths were around 50 nm and 100 nm for NMOS and PMOS devices, respectively.

Original languageEnglish
Pages (from-to)13-18
Number of pages6
JournalSolid-State Electronics
Volume112
DOIs
Publication statusPublished - 2015

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Keywords

  • FD-SOI
  • High-k/metal gate stack
  • Neutral defects
  • UTBB

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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