TY - GEN
T1 - In depth characterization of hole transport in 14nm FD-SOI pMOS devices
AU - Shin, M.
AU - Shi, M.
AU - Mouis, M.
AU - Cros, A.
AU - Josse, E.
AU - Kim, G. T.
AU - Ghibaudo, G.
N1 - Publisher Copyright:
© 2014 IEEE.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2014/1/30
Y1 - 2014/1/30
N2 - In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mechanisms were revealed in terms of their origin and location.
AB - In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mechanisms were revealed in terms of their origin and location.
UR - http://www.scopus.com/inward/record.url?scp=84946685202&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946685202&partnerID=8YFLogxK
U2 - 10.1109/S3S.2014.7028215
DO - 10.1109/S3S.2014.7028215
M3 - Conference contribution
AN - SCOPUS:84946685202
T3 - 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
BT - 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
Y2 - 6 October 2014 through 9 October 2014
ER -