In depth characterization of hole transport in 14nm FD-SOI pMOS devices

M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, Gyu-Tae Kim, G. Ghibaudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mechanisms were revealed in terms of their origin and location.

Original languageEnglish
Title of host publication2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479974382
DOIs
Publication statusPublished - 2014 Jan 30
Event2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014 - Millbrae, United States
Duration: 2014 Oct 62014 Oct 9

Other

Other2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
CountryUnited States
CityMillbrae
Period14/10/614/10/9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Shin, M., Shi, M., Mouis, M., Cros, A., Josse, E., Kim, G-T., & Ghibaudo, G. (2014). In depth characterization of hole transport in 14nm FD-SOI pMOS devices. In 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014 [7028215] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2014.7028215