In depth characterization of hole transport in 14nm FD-SOI pMOS devices

M. Shin; M. Shi; M. Mouis; A. Cros; E. Josse; G. T. Kim; G. Ghibaudo

doi:10.1109/S3S.2014.7028215

In depth characterization of hole transport in 14nm FD-SOI pMOS devices

M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, G. T. Kim, G. Ghibaudo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mechanisms were revealed in terms of their origin and location.

Original language	English
Title of host publication	2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479974382
DOIs	https://doi.org/10.1109/S3S.2014.7028215
Publication status	Published - 2014 Jan 30
Event	2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014 - Millbrae, United States Duration: 2014 Oct 6 → 2014 Oct 9

Publication series

Name	2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014

Other

Other	2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014
Country	United States
City	Millbrae
Period	14/10/6 → 14/10/9

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/S3S.2014.7028215

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Cite this

Shin, M., Shi, M., Mouis, M., Cros, A., Josse, E., Kim, G. T., & Ghibaudo, G. (2014). In depth characterization of hole transport in 14nm FD-SOI pMOS devices. In 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014 [7028215] (2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S.2014.7028215

In depth characterization of hole transport in 14nm FD-SOI pMOS devices. / Shin, M.; Shi, M.; Mouis, M.; Cros, A.; Josse, E.; Kim, G. T.; Ghibaudo, G.

2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7028215 (2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shin, M, Shi, M, Mouis, M, Cros, A, Josse, E, Kim, GT & Ghibaudo, G 2014, In depth characterization of hole transport in 14nm FD-SOI pMOS devices. in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014., 7028215, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014, Institute of Electrical and Electronics Engineers Inc., 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014, Millbrae, United States, 14/10/6. https://doi.org/10.1109/S3S.2014.7028215

Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT et al. In depth characterization of hole transport in 14nm FD-SOI pMOS devices. In 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7028215. (2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014). https://doi.org/10.1109/S3S.2014.7028215

Shin, M. ; Shi, M. ; Mouis, M. ; Cros, A. ; Josse, E. ; Kim, G. T. ; Ghibaudo, G. / In depth characterization of hole transport in 14nm FD-SOI pMOS devices. 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014).

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