In-Ga-Zn-O thin film transistor with HfO 2 gate insulator prepared using various O 2/(Ar + O 2) gas ratios

Young Je Jo, In-Hwan Lee, Joon Seop Kwak

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the effect of the deposition of an HfO 2 thin film as a gate insulator with different O 2/(Ar + O 2) gas ratios using RF magnetron sputtering. The HfO 2 thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O 2/(Ar + O 2) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm 2/(V s). Compared to those prepared with an O 2/(Ar + O 2) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm 2/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O 2/(Ar + O 2) gas ratio.

Original languageEnglish
Pages (from-to)2919-2922
Number of pages4
JournalMaterials Research Bulletin
Volume47
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1
Externally publishedYes

Keywords

  • A. Oxide
  • A. Semiconductors
  • B. Sputtering
  • D. Electrical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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