In-Ga-Zn-O thin film transistor with HfO 2 gate insulator prepared using various O 2/(Ar + O 2) gas ratios

Young Je Jo, In-Hwan Lee, Joon Seop Kwak

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the effect of the deposition of an HfO 2 thin film as a gate insulator with different O 2/(Ar + O 2) gas ratios using RF magnetron sputtering. The HfO 2 thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O 2/(Ar + O 2) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm 2/(V s). Compared to those prepared with an O 2/(Ar + O 2) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm 2/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O 2/(Ar + O 2) gas ratio.

Original languageEnglish
Pages (from-to)2919-2922
Number of pages4
JournalMaterials Research Bulletin
Volume47
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1
Externally publishedYes

Fingerprint

Thin film transistors
transistors
Gases
insulators
Amorphous films
thin films
gases
Transistors
Zinc Oxide
Surface scattering
gallium oxides
Thin films
Gallium
Indium
Zinc oxide
zinc oxides
Magnetron sputtering
indium
magnetron sputtering
roughness

Keywords

  • A. Oxide
  • A. Semiconductors
  • B. Sputtering
  • D. Electrical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

In-Ga-Zn-O thin film transistor with HfO 2 gate insulator prepared using various O 2/(Ar + O 2) gas ratios. / Jo, Young Je; Lee, In-Hwan; Kwak, Joon Seop.

In: Materials Research Bulletin, Vol. 47, No. 10, 01.10.2012, p. 2919-2922.

Research output: Contribution to journalArticle

@article{e80839e3b5c84ccca94fc83081229267,
title = "In-Ga-Zn-O thin film transistor with HfO 2 gate insulator prepared using various O 2/(Ar + O 2) gas ratios",
abstract = "We have investigated the effect of the deposition of an HfO 2 thin film as a gate insulator with different O 2/(Ar + O 2) gas ratios using RF magnetron sputtering. The HfO 2 thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O 2/(Ar + O 2) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm 2/(V s). Compared to those prepared with an O 2/(Ar + O 2) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm 2/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O 2/(Ar + O 2) gas ratio.",
keywords = "A. Oxide, A. Semiconductors, B. Sputtering, D. Electrical properties",
author = "Jo, {Young Je} and In-Hwan Lee and Kwak, {Joon Seop}",
year = "2012",
month = "10",
day = "1",
doi = "10.1016/j.materresbull.2012.04.094",
language = "English",
volume = "47",
pages = "2919--2922",
journal = "Materials Research Bulletin",
issn = "0025-5408",
publisher = "Elsevier Limited",
number = "10",

}

TY - JOUR

T1 - In-Ga-Zn-O thin film transistor with HfO 2 gate insulator prepared using various O 2/(Ar + O 2) gas ratios

AU - Jo, Young Je

AU - Lee, In-Hwan

AU - Kwak, Joon Seop

PY - 2012/10/1

Y1 - 2012/10/1

N2 - We have investigated the effect of the deposition of an HfO 2 thin film as a gate insulator with different O 2/(Ar + O 2) gas ratios using RF magnetron sputtering. The HfO 2 thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O 2/(Ar + O 2) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm 2/(V s). Compared to those prepared with an O 2/(Ar + O 2) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm 2/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O 2/(Ar + O 2) gas ratio.

AB - We have investigated the effect of the deposition of an HfO 2 thin film as a gate insulator with different O 2/(Ar + O 2) gas ratios using RF magnetron sputtering. The HfO 2 thin film affected the device performance of amorphous indium-gallium-zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O 2/(Ar + O 2) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm 2/(V s). Compared to those prepared with an O 2/(Ar + O 2) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm 2/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O 2/(Ar + O 2) gas ratio.

KW - A. Oxide

KW - A. Semiconductors

KW - B. Sputtering

KW - D. Electrical properties

UR - http://www.scopus.com/inward/record.url?scp=84866341025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866341025&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2012.04.094

DO - 10.1016/j.materresbull.2012.04.094

M3 - Article

AN - SCOPUS:84866341025

VL - 47

SP - 2919

EP - 2922

JO - Materials Research Bulletin

JF - Materials Research Bulletin

SN - 0025-5408

IS - 10

ER -