In situ annealing of III1-xMnxV ferromagnetic semiconductors

Xinyu Liu; Seul Ki Bac; Pitambar Sapkota; Cameron Gorsak; Xiang Li; Sining Dong; Sanghoon Lee; Sylwia Ptasinska; Jacek K. Furdyna; Margaret Dobrowolska

doi:10.1116/1.5014983

In situ annealing of III_1-xMn_xV ferromagnetic semiconductors

Xinyu Liu, Seul Ki Bac, Pitambar Sapkota, Cameron Gorsak, Xiang Li, Sining Dong, Sanghoon Lee, Sylwia Ptasinska, Jacek K. Furdyna, Margaret Dobrowolska

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A systematic study of low temperature (LT) annealing III_1-xMn_xV of (Ga_1-xMn_xAs and Ga_1-xMn_xAs_1-yP_y) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III_1-xMn_xV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

Original language	English
Article number	02D102
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	36
Issue number	2
DOIs	https://doi.org/10.1116/1.5014983
Publication status	Published - 2018 Mar 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.5014983

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title = "In situ annealing of III1-xMnxV ferromagnetic semiconductors",

abstract = "A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.",

author = "Xinyu Liu and Bac, {Seul Ki} and Pitambar Sapkota and Cameron Gorsak and Xiang Li and Sining Dong and Sanghoon Lee and Sylwia Ptasinska and Furdyna, {Jacek K.} and Margaret Dobrowolska",

note = "Funding Information: This work was supported by the NSF Grant No. DMR14-00432, Basic Science Research Program through the NRF of Korea funded by the Ministry of Education (No. 2015R1D1A1A01056614), and a grant from Korea University. P.S. and S.P. acknowledge the U.S. Department of Energy Office of Science, Office of Basic Energy Sciences, under the Award No. DE-FC02-04ER15533 (No. NDRL No. 5200). Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = mar,

day = "1",

doi = "10.1116/1.5014983",

language = "English",

volume = "36",

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T1 - In situ annealing of III1-xMnxV ferromagnetic semiconductors

AU - Liu, Xinyu

AU - Bac, Seul Ki

AU - Sapkota, Pitambar

AU - Gorsak, Cameron

AU - Li, Xiang

AU - Dong, Sining

AU - Lee, Sanghoon

AU - Ptasinska, Sylwia

AU - Furdyna, Jacek K.

AU - Dobrowolska, Margaret

N1 - Funding Information: This work was supported by the NSF Grant No. DMR14-00432, Basic Science Research Program through the NRF of Korea funded by the Ministry of Education (No. 2015R1D1A1A01056614), and a grant from Korea University. P.S. and S.P. acknowledge the U.S. Department of Energy Office of Science, Office of Basic Energy Sciences, under the Award No. DE-FC02-04ER15533 (No. NDRL No. 5200). Publisher Copyright: © 2018 Author(s).

PY - 2018/3/1

Y1 - 2018/3/1

N2 - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

AB - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

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In situ annealing of III_1-xMn_xV ferromagnetic semiconductors

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