In situ annealing of III1-xMnxV ferromagnetic semiconductors

Xinyu Liu, Seul Ki Bac, Pitambar Sapkota, Cameron Gorsak, Xiang Li, Sining Dong, Sang Hoon Lee, Sylwia Ptasinska, Jacek K. Furdyna, Margaret Dobrowolska

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Abstract

A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

Original languageEnglish
Article number02D102
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume36
Issue number2
DOIs
Publication statusPublished - 2018 Mar 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Liu, X., Bac, S. K., Sapkota, P., Gorsak, C., Li, X., Dong, S., Lee, S. H., Ptasinska, S., Furdyna, J. K., & Dobrowolska, M. (2018). In situ annealing of III1-xMnxV ferromagnetic semiconductors. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 36(2), [02D102]. https://doi.org/10.1116/1.5014983