TY - JOUR
T1 - In situ annealing of III1-xMnxV ferromagnetic semiconductors
AU - Liu, Xinyu
AU - Bac, Seul Ki
AU - Sapkota, Pitambar
AU - Gorsak, Cameron
AU - Li, Xiang
AU - Dong, Sining
AU - Lee, Sanghoon
AU - Ptasinska, Sylwia
AU - Furdyna, Jacek K.
AU - Dobrowolska, Margaret
N1 - Funding Information:
This work was supported by the NSF Grant No. DMR14-00432, Basic Science Research Program through the NRF of Korea funded by the Ministry of Education (No. 2015R1D1A1A01056614), and a grant from Korea University. P.S. and S.P. acknowledge the U.S. Department of Energy Office of Science, Office of Basic Energy Sciences, under the Award No. DE-FC02-04ER15533 (No. NDRL No. 5200).
PY - 2018/3/1
Y1 - 2018/3/1
N2 - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.
AB - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.
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U2 - 10.1116/1.5014983
DO - 10.1116/1.5014983
M3 - Article
AN - SCOPUS:85041438285
VL - 36
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SN - 2166-2746
IS - 2
M1 - 02D102
ER -