In situ annealing of III1-xMnxV ferromagnetic semiconductors

Xinyu Liu, Seul Ki Bac, Pitambar Sapkota, Cameron Gorsak, Xiang Li, Sining Dong, Sang Hoon Lee, Sylwia Ptasinska, Jacek K. Furdyna, Margaret Dobrowolska

Research output: Contribution to journalArticle

Abstract

A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

Original languageEnglish
Article number02D102
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume36
Issue number2
DOIs
Publication statusPublished - 2018 Mar 1

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Annealing
Semiconductor materials
annealing
Magnetoelectronics
Curie temperature
Magnetic moments
Temperature
Carrier concentration
Multilayers
Deposits
magnetic moments
deposits
atmospheres
Thin films
thin films
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

In situ annealing of III1-xMnxV ferromagnetic semiconductors. / Liu, Xinyu; Bac, Seul Ki; Sapkota, Pitambar; Gorsak, Cameron; Li, Xiang; Dong, Sining; Lee, Sang Hoon; Ptasinska, Sylwia; Furdyna, Jacek K.; Dobrowolska, Margaret.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, No. 2, 02D102, 01.03.2018.

Research output: Contribution to journalArticle

Liu, X, Bac, SK, Sapkota, P, Gorsak, C, Li, X, Dong, S, Lee, SH, Ptasinska, S, Furdyna, JK & Dobrowolska, M 2018, 'In situ annealing of III1-xMnxV ferromagnetic semiconductors', Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, vol. 36, no. 2, 02D102. https://doi.org/10.1116/1.5014983
Liu, Xinyu ; Bac, Seul Ki ; Sapkota, Pitambar ; Gorsak, Cameron ; Li, Xiang ; Dong, Sining ; Lee, Sang Hoon ; Ptasinska, Sylwia ; Furdyna, Jacek K. ; Dobrowolska, Margaret. / In situ annealing of III1-xMnxV ferromagnetic semiconductors. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2018 ; Vol. 36, No. 2.
@article{cf434dac0c5d488cb3d2d91900919b1a,
title = "In situ annealing of III1-xMnxV ferromagnetic semiconductors",
abstract = "A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.",
author = "Xinyu Liu and Bac, {Seul Ki} and Pitambar Sapkota and Cameron Gorsak and Xiang Li and Sining Dong and Lee, {Sang Hoon} and Sylwia Ptasinska and Furdyna, {Jacek K.} and Margaret Dobrowolska",
year = "2018",
month = "3",
day = "1",
doi = "10.1116/1.5014983",
language = "English",
volume = "36",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - In situ annealing of III1-xMnxV ferromagnetic semiconductors

AU - Liu, Xinyu

AU - Bac, Seul Ki

AU - Sapkota, Pitambar

AU - Gorsak, Cameron

AU - Li, Xiang

AU - Dong, Sining

AU - Lee, Sang Hoon

AU - Ptasinska, Sylwia

AU - Furdyna, Jacek K.

AU - Dobrowolska, Margaret

PY - 2018/3/1

Y1 - 2018/3/1

N2 - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

AB - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

UR - http://www.scopus.com/inward/record.url?scp=85041438285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041438285&partnerID=8YFLogxK

U2 - 10.1116/1.5014983

DO - 10.1116/1.5014983

M3 - Article

AN - SCOPUS:85041438285

VL - 36

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 2

M1 - 02D102

ER -