In situ annealing of III1-xMnxV ferromagnetic semiconductors

Xinyu Liu; Seul Ki Bac; Pitambar Sapkota; Cameron Gorsak; Xiang Li; Sining Dong; Sang Hoon Lee; Sylwia Ptasinska; Jacek K. Furdyna; Margaret Dobrowolska

doi:10.1116/1.5014983

In situ annealing of III_1-xMn_xV ferromagnetic semiconductors

Xinyu Liu, Seul Ki Bac, Pitambar Sapkota, Cameron Gorsak, Xiang Li, Sining Dong, Sang Hoon Lee, Sylwia Ptasinska, Jacek K. Furdyna, Margaret Dobrowolska

Department of Physics

Research output: Contribution to journal › Article

Abstract

A systematic study of low temperature (LT) annealing III_1-xMn_xV of (Ga_1-xMn_xAs and Ga_1-xMn_xAs_1-yP_y) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III_1-xMn_xV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

Original language	English
Article number	02D102
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	36
Issue number	2
DOIs	https://doi.org/10.1116/1.5014983
Publication status	Published - 2018 Mar 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Liu, X., Bac, S. K., Sapkota, P., Gorsak, C., Li, X., Dong, S., Lee, S. H., Ptasinska, S., Furdyna, J. K., & Dobrowolska, M. (2018). In situ annealing of III_1-xMn_xV ferromagnetic semiconductors. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 36(2), [02D102]. https://doi.org/10.1116/1.5014983

In situ annealing of III_1-xMn_xV ferromagnetic semiconductors. / Liu, Xinyu; Bac, Seul Ki; Sapkota, Pitambar; Gorsak, Cameron; Li, Xiang; Dong, Sining; Lee, Sang Hoon; Ptasinska, Sylwia; Furdyna, Jacek K.; Dobrowolska, Margaret.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, No. 2, 02D102, 01.03.2018.

Research output: Contribution to journal › Article

@article{cf434dac0c5d488cb3d2d91900919b1a,

title = "In situ annealing of III1-xMnxV ferromagnetic semiconductors",

abstract = "A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.",

author = "Xinyu Liu and Bac, {Seul Ki} and Pitambar Sapkota and Cameron Gorsak and Xiang Li and Sining Dong and Lee, {Sang Hoon} and Sylwia Ptasinska and Furdyna, {Jacek K.} and Margaret Dobrowolska",

year = "2018",

month = mar,

day = "1",

doi = "10.1116/1.5014983",

language = "English",

volume = "36",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - In situ annealing of III1-xMnxV ferromagnetic semiconductors

AU - Liu, Xinyu

AU - Bac, Seul Ki

AU - Sapkota, Pitambar

AU - Gorsak, Cameron

AU - Li, Xiang

AU - Dong, Sining

AU - Lee, Sang Hoon

AU - Ptasinska, Sylwia

AU - Furdyna, Jacek K.

AU - Dobrowolska, Margaret

PY - 2018/3/1

Y1 - 2018/3/1

N2 - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

AB - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.

UR - http://www.scopus.com/inward/record.url?scp=85041438285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041438285&partnerID=8YFLogxK

U2 - 10.1116/1.5014983

DO - 10.1116/1.5014983

M3 - Article

AN - SCOPUS:85041438285

VL - 36

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 2

M1 - 02D102

ER -