Abstract
A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.
| Original language | English |
|---|---|
| Article number | 02D102 |
| Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
| Volume | 36 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2018 Mar 1 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
In situ annealing of III1-xMnxV ferromagnetic semiconductors. / Liu, Xinyu; Bac, Seul Ki; Sapkota, Pitambar; Gorsak, Cameron; Li, Xiang; Dong, Sining; Lee, Sang Hoon; Ptasinska, Sylwia; Furdyna, Jacek K.; Dobrowolska, Margaret.
In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, No. 2, 02D102, 01.03.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In situ annealing of III1-xMnxV ferromagnetic semiconductors
AU - Liu, Xinyu
AU - Bac, Seul Ki
AU - Sapkota, Pitambar
AU - Gorsak, Cameron
AU - Li, Xiang
AU - Dong, Sining
AU - Lee, Sang Hoon
AU - Ptasinska, Sylwia
AU - Furdyna, Jacek K.
AU - Dobrowolska, Margaret
PY - 2018/3/1
Y1 - 2018/3/1
N2 - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.
AB - A systematic study of low temperature (LT) annealing III1-xMnxV of (Ga1-xMnxAs and Ga1-xMnxAs1-yPy) thin films in situ with different capping layers (Se, Te, or As) was carried out without exposure to the atmosphere. Experimental results show that a correct in situ annealing approach can lead to significant increases of the Curie temperature, carrier concentration, and magnetic moment, similar to the ex situ LT-annealing experiments achieved in earlier studies. Moreover, this approach allowed us to successfully deposit high-quality semiconductor layers on top of such in situ annealed films, demonstrating great potential for designing high quality III1-xMnxV-based multilayers for spintronic applications optimized by the benefits of the LT-annealing.
UR - http://www.scopus.com/inward/record.url?scp=85041438285&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85041438285&partnerID=8YFLogxK
U2 - 10.1116/1.5014983
DO - 10.1116/1.5014983
M3 - Article
AN - SCOPUS:85041438285
VL - 36
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
SN - 2166-2746
IS - 2
M1 - 02D102
ER -