In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have studied epitaxial crystal growth of Si 1-xGe x films on silicon substrates at 550 °C by low pressure chemical vapor deposition. In a low PH 3 partial pressure region such as below 1.25×10 -3 Pa, both the phosphorus and carrier concentrations increased with increasing PH 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH 4 and GeH 4 adsorption/reactions on the surfaces, and its suppression effect on SiH 4 is actually much stronger than on GeH 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH 3 partial pressure region.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume33
Issue numberSUPPL. 2
Publication statusPublished - 1998 Dec 1
Externally publishedYes

Fingerprint

partial pressure
phosphorus
low pressure
vapor deposition
crystal growth
retarding
adsorption
silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{590079df5ba44f2e9164ee325f17fb60,
title = "In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition",
abstract = "We have studied epitaxial crystal growth of Si 1-xGe x films on silicon substrates at 550 °C by low pressure chemical vapor deposition. In a low PH 3 partial pressure region such as below 1.25×10 -3 Pa, both the phosphorus and carrier concentrations increased with increasing PH 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH 4 and GeH 4 adsorption/reactions on the surfaces, and its suppression effect on SiH 4 is actually much stronger than on GeH 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH 3 partial pressure region.",
author = "Lee, {Cheol Jin}",
year = "1998",
month = "12",
day = "1",
language = "English",
volume = "33",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. 2",

}

TY - JOUR

T1 - In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

AU - Lee, Cheol Jin

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have studied epitaxial crystal growth of Si 1-xGe x films on silicon substrates at 550 °C by low pressure chemical vapor deposition. In a low PH 3 partial pressure region such as below 1.25×10 -3 Pa, both the phosphorus and carrier concentrations increased with increasing PH 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH 4 and GeH 4 adsorption/reactions on the surfaces, and its suppression effect on SiH 4 is actually much stronger than on GeH 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH 3 partial pressure region.

AB - We have studied epitaxial crystal growth of Si 1-xGe x films on silicon substrates at 550 °C by low pressure chemical vapor deposition. In a low PH 3 partial pressure region such as below 1.25×10 -3 Pa, both the phosphorus and carrier concentrations increased with increasing PH 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH 4 and GeH 4 adsorption/reactions on the surfaces, and its suppression effect on SiH 4 is actually much stronger than on GeH 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH 3 partial pressure region.

UR - http://www.scopus.com/inward/record.url?scp=0032279196&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032279196&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032279196

VL - 33

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. 2

ER -