We have studied epitaxial crystal growth of Si 1-xGe x films on silicon substrates at 550 °C by low pressure chemical vapor deposition. In a low PH 3 partial pressure region such as below 1.25×10 -3 Pa, both the phosphorus and carrier concentrations increased with increasing PH 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH 4 and GeH 4 adsorption/reactions on the surfaces, and its suppression effect on SiH 4 is actually much stronger than on GeH 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH 3 partial pressure region.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. 2|
|Publication status||Published - 1998|
ASJC Scopus subject areas
- Physics and Astronomy(all)