In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

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Abstract

We have studied epitaxial crystal growth of Si 1-xGe x films on silicon substrates at 550 °C by low pressure chemical vapor deposition. In a low PH 3 partial pressure region such as below 1.25×10 -3 Pa, both the phosphorus and carrier concentrations increased with increasing PH 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH 4 and GeH 4 adsorption/reactions on the surfaces, and its suppression effect on SiH 4 is actually much stronger than on GeH 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH 3 partial pressure region.

Original languageEnglish
Pages (from-to)S305-S308
JournalJournal of the Korean Physical Society
Volume33
Issue numberSUPPL. 2
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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