Abstract
Zinc oxide (ZnO) films were deposited on glass substrates by radio-frequency (RF) magnetron reactive sputtering at room temperature. With the relationship between deposition rate and oxygen flow, the appropriate deposition condition was not set up easily for reactive sputtering. The mechanisms between the sputtered material and the reactive gas may cause some processing stability problems. Therefore, it is required to find the in situ way of determining which mode films would be deposited before deposition. The in situ monitoring of the target voltage during deposition can be helpful for obtaining transparent and conductive films. With the in situ monitoring of the target voltage, the properties of ZnO thin films can be predicted and selected within metallic, transition, and oxide modes.
| Original language | English |
|---|---|
| Article number | 095501 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 9 PART 1 |
| DOIs | |
| Publication status | Published - 2011 Sep 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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In situ monitoring of target voltage in magnetron reactive sputtering of ZnO. / Kim, Youngseok; Jang, Samseok; Park, Bum Ryull; Byun, Dong Jin.
In: Japanese Journal of Applied Physics, Vol. 50, No. 9 PART 1, 095501, 01.09.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In situ monitoring of target voltage in magnetron reactive sputtering of ZnO
AU - Kim, Youngseok
AU - Jang, Samseok
AU - Park, Bum Ryull
AU - Byun, Dong Jin
PY - 2011/9/1
Y1 - 2011/9/1
N2 - Zinc oxide (ZnO) films were deposited on glass substrates by radio-frequency (RF) magnetron reactive sputtering at room temperature. With the relationship between deposition rate and oxygen flow, the appropriate deposition condition was not set up easily for reactive sputtering. The mechanisms between the sputtered material and the reactive gas may cause some processing stability problems. Therefore, it is required to find the in situ way of determining which mode films would be deposited before deposition. The in situ monitoring of the target voltage during deposition can be helpful for obtaining transparent and conductive films. With the in situ monitoring of the target voltage, the properties of ZnO thin films can be predicted and selected within metallic, transition, and oxide modes.
AB - Zinc oxide (ZnO) films were deposited on glass substrates by radio-frequency (RF) magnetron reactive sputtering at room temperature. With the relationship between deposition rate and oxygen flow, the appropriate deposition condition was not set up easily for reactive sputtering. The mechanisms between the sputtered material and the reactive gas may cause some processing stability problems. Therefore, it is required to find the in situ way of determining which mode films would be deposited before deposition. The in situ monitoring of the target voltage during deposition can be helpful for obtaining transparent and conductive films. With the in situ monitoring of the target voltage, the properties of ZnO thin films can be predicted and selected within metallic, transition, and oxide modes.
UR - http://www.scopus.com/inward/record.url?scp=80052982239&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052982239&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.095501
DO - 10.1143/JJAP.50.095501
M3 - Article
AN - SCOPUS:80052982239
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 PART 1
M1 - 095501
ER -