In situ monitoring of target voltage in magnetron reactive sputtering of ZnO

Youngseok Kim, Samseok Jang, Bum Ryull Park, Dong Jin Byun

Research output: Contribution to journalArticle

Abstract

Zinc oxide (ZnO) films were deposited on glass substrates by radio-frequency (RF) magnetron reactive sputtering at room temperature. With the relationship between deposition rate and oxygen flow, the appropriate deposition condition was not set up easily for reactive sputtering. The mechanisms between the sputtered material and the reactive gas may cause some processing stability problems. Therefore, it is required to find the in situ way of determining which mode films would be deposited before deposition. The in situ monitoring of the target voltage during deposition can be helpful for obtaining transparent and conductive films. With the in situ monitoring of the target voltage, the properties of ZnO thin films can be predicted and selected within metallic, transition, and oxide modes.

Original languageEnglish
Article number095501
JournalJapanese Journal of Applied Physics
Volume50
Issue number9 PART 1
DOIs
Publication statusPublished - 2011 Sep 1

Fingerprint

Reactive sputtering
Zinc oxide
zinc oxides
Magnetron sputtering
sputtering
Oxide films
Monitoring
Electric potential
electric potential
Conductive films
Deposition rates
oxide films
Glass
Thin films
radio frequencies
Oxides
Oxygen
Substrates
Processing
Gases

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

In situ monitoring of target voltage in magnetron reactive sputtering of ZnO. / Kim, Youngseok; Jang, Samseok; Park, Bum Ryull; Byun, Dong Jin.

In: Japanese Journal of Applied Physics, Vol. 50, No. 9 PART 1, 095501, 01.09.2011.

Research output: Contribution to journalArticle

Kim, Youngseok ; Jang, Samseok ; Park, Bum Ryull ; Byun, Dong Jin. / In situ monitoring of target voltage in magnetron reactive sputtering of ZnO. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 9 PART 1.
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