In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

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Abstract

The lateral reduction of interconnection in nanoelectronics will require a one-dimensional metallic nanointerconnector. This work presents an achievement of the all-chromium (Cr) nanointerconnection architecture, an approach to nanointerconnection, in which both electrodes and connecting lines are realized by the same Cr using the autocatalytic function of Cr without any additional lithography. Especially observed was the time evolution of the directional lateral growth of Cr nanowires using a dc electric field during the in situ growth of Cr nanowires. Finally, it was confirmed that the in situ-grown Cr nanobridge could act as an electrode interconnector due to its good metallic current-voltage characteristics.

Original languageEnglish
Article number173103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number17
DOIs
Publication statusPublished - 2005 Apr 25

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chromium
nanowires
electrodes
lithography
electric fields
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth. / Lee, Yun-Hi; Jang, Y. T.; Ju, Byeong Kwon.

In: Applied Physics Letters, Vol. 86, No. 17, 173103, 25.04.2005, p. 1-3.

Research output: Contribution to journalArticle

@article{05296a6afd424720a0c904457f61e314,
title = "In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth",
abstract = "The lateral reduction of interconnection in nanoelectronics will require a one-dimensional metallic nanointerconnector. This work presents an achievement of the all-chromium (Cr) nanointerconnection architecture, an approach to nanointerconnection, in which both electrodes and connecting lines are realized by the same Cr using the autocatalytic function of Cr without any additional lithography. Especially observed was the time evolution of the directional lateral growth of Cr nanowires using a dc electric field during the in situ growth of Cr nanowires. Finally, it was confirmed that the in situ-grown Cr nanobridge could act as an electrode interconnector due to its good metallic current-voltage characteristics.",
author = "Yun-Hi Lee and Jang, {Y. T.} and Ju, {Byeong Kwon}",
year = "2005",
month = "4",
day = "25",
doi = "10.1063/1.1915530",
language = "English",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

AU - Lee, Yun-Hi

AU - Jang, Y. T.

AU - Ju, Byeong Kwon

PY - 2005/4/25

Y1 - 2005/4/25

N2 - The lateral reduction of interconnection in nanoelectronics will require a one-dimensional metallic nanointerconnector. This work presents an achievement of the all-chromium (Cr) nanointerconnection architecture, an approach to nanointerconnection, in which both electrodes and connecting lines are realized by the same Cr using the autocatalytic function of Cr without any additional lithography. Especially observed was the time evolution of the directional lateral growth of Cr nanowires using a dc electric field during the in situ growth of Cr nanowires. Finally, it was confirmed that the in situ-grown Cr nanobridge could act as an electrode interconnector due to its good metallic current-voltage characteristics.

AB - The lateral reduction of interconnection in nanoelectronics will require a one-dimensional metallic nanointerconnector. This work presents an achievement of the all-chromium (Cr) nanointerconnection architecture, an approach to nanointerconnection, in which both electrodes and connecting lines are realized by the same Cr using the autocatalytic function of Cr without any additional lithography. Especially observed was the time evolution of the directional lateral growth of Cr nanowires using a dc electric field during the in situ growth of Cr nanowires. Finally, it was confirmed that the in situ-grown Cr nanobridge could act as an electrode interconnector due to its good metallic current-voltage characteristics.

UR - http://www.scopus.com/inward/record.url?scp=20844462867&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844462867&partnerID=8YFLogxK

U2 - 10.1063/1.1915530

DO - 10.1063/1.1915530

M3 - Article

AN - SCOPUS:20844462867

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 173103

ER -