In situ Ni-Si nanowire junction based on substrate sourced growth and its electrical transport behavior

Yun-Hi Lee, Hyuk Sang Kwon

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The authors report on formation of high current carrying Ni-Si nanowires between Ni/heavily doped polycrstaliine Si contacts using substrate sourced growth without any supply of Si source gas. The conductance (G) of a 18 nm diameter nanowire bridge in the temperature range of 13-293 K showed a power function of temperature T α, with a typical exponent α≈0.62±0.06, and the dI/dV were fitted to the V α with α≈0.55±0.15. Although the power law dependence of the G and dI/dV, which provides evidence for the interaction of the electrons in a low-dimensional infinite conductor, corresponds to the featured behavior of the interacting electrons within an error tolerance, the strength of the interaction is very weak due to the highly metallic characteristics with finite length and lack of purity of the channel. As a result, the in situ high current carrying Ni-Si nanowire junction can be utilized not only as a nanointerconnector, but also as a tool to study low-dimensional electrical transport properties.

Original languageEnglish
Article number253115
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2007 Aug 2


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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