In situ observation of vacancy dynamics during resistance changes of oxide devices

Sang Jun Choi, Gyeong Su Park, Ki Hong Kim, Woo Young Yang, Hyung Jin Bae, Kyoung Jin Lee, Hyung Ik Lee, Seong Yong Park, Sung Heo, Hyun Joon Shin, Sangbin Lee, Soohaeng Cho

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12 Citations (Scopus)

Abstract

We report that the charged oxygen vacancies are the key element to induce a resistive switching in copper oxide resistive devices and an external bias drifts the charged vacancies at the metaloxide Schottky interface causing the switching phenomenon by in situ transmission electron microscopy. Notable results are that the switching polarity is determined by the charge of the vacancies and that the voltage inducing non-volatile switching behavior originates from the Schottky barrier at the interface, which clarifies the origin of resistive switching and provides a design strategy for oxide resistive devices.

Original languageEnglish
Article number056106
JournalJournal of Applied Physics
Volume110
Issue number5
DOIs
Publication statusPublished - 2011 Sep 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Choi, S. J., Park, G. S., Kim, K. H., Yang, W. Y., Bae, H. J., Lee, K. J., Lee, H. I., Park, S. Y., Heo, S., Shin, H. J., Lee, S., & Cho, S. (2011). In situ observation of vacancy dynamics during resistance changes of oxide devices. Journal of Applied Physics, 110(5), [056106]. https://doi.org/10.1063/1.3626816