In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory

Sang Jun Choi; Gyeong Su Park; Ki Hong Kim; Soohaeng Cho; Woo Young Yang; Xiang Shu Li; Jung Hwan Moon; Kyung Jin Lee; Kinam Kim

doi:10.1002/adma.201100507

In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory

Sang Jun Choi, Gyeong Su Park, Ki Hong Kim, Soohaeng Cho, Woo Young Yang, Xiang Shu Li, Jung Hwan Moon, Kyung Jin Lee, Kinam Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

153 Citations (Scopus)

Abstract

Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.

Original language	English
Pages (from-to)	3272-3277
Number of pages	6
Journal	Advanced Materials
Volume	23
Issue number	29
DOIs	https://doi.org/10.1002/adma.201100507
Publication status	Published - 2011 Aug 2

Keywords

RE-RAM
filament model
mutlilevel resistance state
resistive switching effect
solid electrolyte resistive switching memory

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201100507

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abstract = "Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.",

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AU - Choi, Sang Jun

AU - Park, Gyeong Su

AU - Kim, Ki Hong

AU - Cho, Soohaeng

AU - Yang, Woo Young

AU - Li, Xiang Shu

AU - Moon, Jung Hwan

AU - Lee, Kyung Jin

AU - Kim, Kinam

PY - 2011/8/2

Y1 - 2011/8/2

N2 - Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.

AB - Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.

KW - RE-RAM

KW - filament model

KW - mutlilevel resistance state

KW - resistive switching effect

KW - solid electrolyte resistive switching memory

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JO - Advanced Materials

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ER -

In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory

Abstract

Keywords

ASJC Scopus subject areas

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