In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory

Sang Jun Choi, Gyeong Su Park, Ki Hong Kim, Soohaeng Cho, Woo Young Yang, Xiang Shu Li, Jung Hwan Moon, Kyung Jin Lee, Kinam Kim

Research output: Contribution to journalArticle

125 Citations (Scopus)

Abstract

Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.

Original languageEnglish
Pages (from-to)3272-3277
Number of pages6
JournalAdvanced Materials
Volume23
Issue number29
DOIs
Publication statusPublished - 2011 Aug 2

Keywords

  • RE-RAM
  • filament model
  • mutlilevel resistance state
  • resistive switching effect
  • solid electrolyte resistive switching memory

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Choi, S. J., Park, G. S., Kim, K. H., Cho, S., Yang, W. Y., Li, X. S., Moon, J. H., Lee, K. J., & Kim, K. (2011). In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory. Advanced Materials, 23(29), 3272-3277. https://doi.org/10.1002/adma.201100507