In-situ phosphorus doping on Si1-xGex epitaxial growth in the SiH4 - GeH4 - PH3 gas system by using LPCVD

Cheol Jin Lee, Takashi Matsuura, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 1998
Subtitle of host publication1998 International Microprocesses and Nanotechnology Conference
EditorsHyung Joon Yoo, Shinji Okazaki, Jinho Ahn, Ohyun Kim, Masanori Komuro
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages31-32
Number of pages2
Volume1998-July
ISBN (Electronic)4930813832, 9784930813831
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes
Event1998 International Microprocesses and Nanotechnology Conference, MNC 1998 - Kyoungju, Korea, Republic of
Duration: 1998 Jul 131998 Jul 16

Other

Other1998 International Microprocesses and Nanotechnology Conference, MNC 1998
CountryKorea, Republic of
CityKyoungju
Period98/7/1398/7/16

ASJC Scopus subject areas

  • Materials Science(all)
  • Nuclear and High Energy Physics
  • Computer Science Applications

Cite this

Lee, C. J., Matsuura, T., & Murota, J. (1998). In-situ phosphorus doping on Si1-xGex epitaxial growth in the SiH4 - GeH4 - PH3 gas system by using LPCVD. In H. J. Yoo, S. Okazaki, J. Ahn, O. Kim, & M. Komuro (Eds.), Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference (Vol. 1998-July, pp. 31-32). [729935] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.1998.729935