InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

Ho Sung Kim, Seung Yeop Ahn, Sang Hyeon Kim, Geun Hwan Ryu, Ji Hoon Kyhm, Kyung Woon Lee, Jung ho Park, Won Jun Choi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.

Original languageEnglish
Pages (from-to)17562-17570
Number of pages9
JournalOptics Express
Volume25
Issue number15
DOIs
Publication statusPublished - 2017 Jul 24

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Kim, H. S., Ahn, S. Y., Kim, S. H., Ryu, G. H., Kyhm, J. H., Lee, K. W., Park, J. H., & Choi, W. J. (2017). InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off. Optics Express, 25(15), 17562-17570. https://doi.org/10.1364/OE.25.017562