InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

Ho Sung Kim, Seung Yeop Ahn, Sang Hyeon Kim, Geun Hwan Ryu, Ji Hoon Kyhm, Kyung Woon Lee, Jung ho Park, Won Jun Choi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.

Original languageEnglish
Pages (from-to)17562-17570
Number of pages9
JournalOptics Express
Volume25
Issue number15
DOIs
Publication statusPublished - 2017 Jul 24

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photometers
quantum dots
wafers
mirrors
photoluminescence
silicon
metals
flat surfaces
x ray diffraction
degradation
cavities
fabrication
air
crystals

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Kim, H. S., Ahn, S. Y., Kim, S. H., Ryu, G. H., Kyhm, J. H., Lee, K. W., ... Choi, W. J. (2017). InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off. Optics Express, 25(15), 17562-17570. https://doi.org/10.1364/OE.25.017562

InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off. / Kim, Ho Sung; Ahn, Seung Yeop; Kim, Sang Hyeon; Ryu, Geun Hwan; Kyhm, Ji Hoon; Lee, Kyung Woon; Park, Jung ho; Choi, Won Jun.

In: Optics Express, Vol. 25, No. 15, 24.07.2017, p. 17562-17570.

Research output: Contribution to journalArticle

Kim, Ho Sung ; Ahn, Seung Yeop ; Kim, Sang Hyeon ; Ryu, Geun Hwan ; Kyhm, Ji Hoon ; Lee, Kyung Woon ; Park, Jung ho ; Choi, Won Jun. / InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off. In: Optics Express. 2017 ; Vol. 25, No. 15. pp. 17562-17570.
@article{d47bb337dbcb4d3d82f1b58b22d1037e,
title = "InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off",
abstract = "We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.",
author = "Kim, {Ho Sung} and Ahn, {Seung Yeop} and Kim, {Sang Hyeon} and Ryu, {Geun Hwan} and Kyhm, {Ji Hoon} and Lee, {Kyung Woon} and Park, {Jung ho} and Choi, {Won Jun}",
year = "2017",
month = "7",
day = "24",
doi = "10.1364/OE.25.017562",
language = "English",
volume = "25",
pages = "17562--17570",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "15",

}

TY - JOUR

T1 - InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

AU - Kim, Ho Sung

AU - Ahn, Seung Yeop

AU - Kim, Sang Hyeon

AU - Ryu, Geun Hwan

AU - Kyhm, Ji Hoon

AU - Lee, Kyung Woon

AU - Park, Jung ho

AU - Choi, Won Jun

PY - 2017/7/24

Y1 - 2017/7/24

N2 - We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.

AB - We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.

UR - http://www.scopus.com/inward/record.url?scp=85025469694&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85025469694&partnerID=8YFLogxK

U2 - 10.1364/OE.25.017562

DO - 10.1364/OE.25.017562

M3 - Article

AN - SCOPUS:85025469694

VL - 25

SP - 17562

EP - 17570

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 15

ER -