InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy

Kwang Woong Kim, Nam Ki Cho, Sung Phil Ryu, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jung ho Park

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Abstract

We report the first demonstration of room-temperature (RT) lasing at 1.3 μm from the ground state of three-stacked InAs quantum dots (QDs) in an In 0.85Ga 0.85As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-um-long × 15-μm-wide ridge structure, the threshold current density (J th) at RT is 1.55 A/cm 2 with the ground state lasing at 1310 nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310nm and to the first excited state at 1232nm with increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski-Krastanov QD-LD.

Original languageEnglish
Pages (from-to)8010-8013
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number10 A
DOIs
Publication statusPublished - 2006 Oct 15

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Atomic layer epitaxy
Quantum dot lasers
atomic layer epitaxy
Ground state
Semiconductor lasers
lasing
semiconductor lasers
quantum dots
ground state
room temperature
Threshold current density
Wavelength
Temperature
Excited states
Semiconductor quantum wells
Semiconductor quantum dots
Demonstrations
threshold currents
wavelengths
ridges

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

InAs/GaAs quantum-dot laser diode lasing at 1.3 μm with triple-stacked-layer dots-in-a-well structure grown by atomic layer epitaxy. / Kim, Kwang Woong; Cho, Nam Ki; Ryu, Sung Phil; Song, Jin Dong; Choi, Won Jun; Lee, Jung Il; Park, Jung ho.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 10 A, 15.10.2006, p. 8010-8013.

Research output: Contribution to journalArticle

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AU - Choi, Won Jun

AU - Lee, Jung Il

AU - Park, Jung ho

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N2 - We report the first demonstration of room-temperature (RT) lasing at 1.3 μm from the ground state of three-stacked InAs quantum dots (QDs) in an In 0.85Ga 0.85As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-um-long × 15-μm-wide ridge structure, the threshold current density (J th) at RT is 1.55 A/cm 2 with the ground state lasing at 1310 nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310nm and to the first excited state at 1232nm with increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski-Krastanov QD-LD.

AB - We report the first demonstration of room-temperature (RT) lasing at 1.3 μm from the ground state of three-stacked InAs quantum dots (QDs) in an In 0.85Ga 0.85As quantum well, which was grown by atomic layer epitaxy (ALE). For an as-cleaved device with a 2000-um-long × 15-μm-wide ridge structure, the threshold current density (J th) at RT is 1.55 A/cm 2 with the ground state lasing at 1310 nm under pulsed operation. The thermal coefficient of a lasing wavelength shift is 0.53 nm/K and the characteristic temperature is 103 K near RT. The lasing wavelength of the QD laser diodes (LDs) shows simultaneous lasing and the state switching from the ground state at 1310nm and to the first excited state at 1232nm with increasing injection current owing to the gain saturation of the ground state. The performance of ALE QD-LD is comparable to that of the conventional Stranski-Krastanov QD-LD.

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