InAsP phase formations during the growth of a GaInAsP/InP distributed feedback laser diode structure on corrugated InP using metalorganic vapor phase epitaxy

Dong Hoon Jang, Jeong Soo Kim, Kyung Hyun Park, Sahn Nahm, Seung Won Lee, Jung Kee Lee, Ho Sung Cho, Hong Man Kim, Hyung Moo Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new phase formed during the heatup time in the PH3 and AsH3 ambient was noted, and the defect generation during MOVPE growth in GaInAsP/InP double heterostructures on the corrugated InP substrates was examined. An InAsP phase formation was observed using transmission electron microscopy. The composition of As and p in the new phase was determined from the energy dispersive spectroscopy spectrum considering the thickness effect for the samples. The dependence of the new phase composition on the AsH3 partial pressure was noted when the PH3 partial pressure was 5.67 × 10-1 Torr during the heatup time. The coupling coefficients for the grating in the distributed feedback laser diode structure can be readily controlled by the AsH3 partial pressure and the heat-up time.

Original languageEnglish
Pages (from-to)3191-3193
Number of pages3
JournalApplied Physics Letters
Volume66
Issue number23
DOIs
Publication statusPublished - 1995 Jun 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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