InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy

Dong Hoon Jang, Jeong Soo Kim, Kyung Hyun Park, Sahn Nahm, Seung Won Lee, Jung Kee Lee, Ho Sung Cho, Hong Man Kim, Hyung Moo Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An InAsP phase formed during the heatup time to the growth temperature of MOVPE was investigated by transmission electron microscopy and energy dispersive spectroscopy. The thickness of the InAsP phase on the concave regions of corrugation is increased with increased AsH3 partial pressure and heat-up time. The arsenic composition in InAsP was also increased with the increase of AsH3 partial pressure during the heat-up time. Dislocations and defects were not generated below an AsH3 partial pressure of 2.4×10-3 Torr, although strain was induced according to the thickness and composition of InAsP formed on the concave regions of corrugation.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
DOIs
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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