Incorporation of hydroxyl ions and protons in oxide ion vacancies in nanoscale yttria stabilized zirconia during atomic layer deposition

Kyung Sik Son, Min Young Bae, Kiho Bae, Jeong Sook Ha, Joon Hyung Shim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work provides a direct evidence that protons are incorporated in yttria stabilized zirconia (YSZ) deposited by atomic layer deposition (ALD) during fabrication of films not from ambient water after deposition. Oxydant made of proton isotopes or deutrium is used as a tracer of proton incorporation during the synthesis and the time-of-flight secondary mass ion mass spectrometry (TOF-SIMS) has been condcuted to conduct depth profiling. As a result, we have identified that protons or deutrium ions introduced during deposition truly favor to reside in the ALD YSZ layers and that concentration of protons incorporated during ALD is related to concentration of yttrium.

Original languageEnglish
Title of host publicationIonic and Mixed Conducting Ceramics 8
Pages155-160
Number of pages6
Edition1
DOIs
Publication statusPublished - 2012
EventIonic and Mixed Conducting Ceramics 8 - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number1
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherIonic and Mixed Conducting Ceramics 8 - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

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    Son, K. S., Bae, M. Y., Bae, K., Ha, J. S., & Shim, J. H. (2012). Incorporation of hydroxyl ions and protons in oxide ion vacancies in nanoscale yttria stabilized zirconia during atomic layer deposition. In Ionic and Mixed Conducting Ceramics 8 (1 ed., pp. 155-160). (ECS Transactions; Vol. 45, No. 1). https://doi.org/10.1149/1.3701304