Indium selenide (In2Se3) thin film for phase-change memory

Heon Lee, Dae Hwan Kang, Lung Tran

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

A cross-point type phase-change random access memory (PRAM) device without an access transistor is successfully fabricated with the In2Se 3-phase-change resistor, which has much higher electrical resistivity than Ge2Sb2Te5 and of which electric resistivity can be varied by the factor of 105 times, related with the degree of crystallization. Due to its higher electrical resistivity, the switching power can be delivered more effectively. Since In2Se 3 is single-phase binary compound, the device failure related to phase decomposition can be avoided. Since the volume of phase change is very limited, and the heating duration is only for few tens of nanoseconds to 10 μs, the transition of In2Se3-phase-change material is done under very far from its thermodynamic equilibrium condition, and thus, formation of the secondary phases or different crystalline phases was not observed. The static mode switching (dc test) is tested for the 5 μm-sized In2Se3 PRAM device. In the first sweep, the as-grown amorphous In2Se3 resistor showed the high resistance state at low voltage region. However, when it reached the threshold voltage, the electrical resistance of the device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the 5 μm-sized In2Se3 PRAM device shows that the reset (crystalline → amorphous) of the device was done with a 70 ns-3.1 V pulse and the set (amorphous → crystalline) of the device was done with a 10 μs-1.2 V pulse. As high as 100 of switching dynamic range (ratio of R high to Rlow) was observed.

Original languageEnglish
Pages (from-to)196-201
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume119
Issue number2
DOIs
Publication statusPublished - 2005 May 25

Fingerprint

indium selenides
Phase change memory
Indium
Thin films
thin films
Crystalline materials
Data storage equipment
random access memory
Resistors
Acoustic impedance
Phase change materials
Electric conductivity
resistors
electrical resistivity
Crystallization
Threshold voltage
Transistors
Thermodynamics
phase change materials
Decomposition

Keywords

  • GeSb Te
  • InSe
  • Phase-change memory (PCM)
  • Phase-change random access memory (PRAM)
  • Phase-change resistor
  • Pulsed mode switching
  • Reset
  • Set
  • Static mode switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Indium selenide (In2Se3) thin film for phase-change memory. / Lee, Heon; Kang, Dae Hwan; Tran, Lung.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 119, No. 2, 25.05.2005, p. 196-201.

Research output: Contribution to journalArticle

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