Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots

Ho Sung Kim, Min Su Park, Sang Hyeon Kim, Suk In Park, Jin Dong Song, Sang Hyuck Kim, Won Jun Choi, Jung ho Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density-voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalThin Solid Films
Volume604
DOIs
Publication statusPublished - 2016 Apr 1

Keywords

  • Gallium Arsenide
  • Indium Arsenide
  • Indiun tin oxide
  • Quantum dots
  • Schottky barrier
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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  • Cite this

    Kim, H. S., Park, M. S., Kim, S. H., Park, S. I., Song, J. D., Kim, S. H., Choi, W. J., & Park, J. H. (2016). Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots. Thin Solid Films, 604, 81-84. https://doi.org/10.1016/j.tsf.2016.03.025