Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots

Ho Sung Kim, Min Su Park, Sang Hyeon Kim, Suk In Park, Jin Dong Song, Sang Hyuck Kim, Won Jun Choi, Jung Ho Park

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We report the electrical and optical characteristics of indium-tin-oxide (ITO)/GaAs Schottky barrier solar cells (SBSCs) with embedded InAs quantum dots (QDs). Twenty layers of self-assembled InAs QDs are inserted into the SBSCs so as to increase the potential barrier height at the ITO/GaAs junctions and to create additional photo-generated electrons in the quantum confined states of the QDs. After analyzing the current density-voltage characteristics, the photoluminescence, and the external quantum efficiency of the fabricated SBSCs, it was found that the incorporation of InAs QDs into the ITO/GaAs SBSCs results in an increase of both of the open-circuit voltage and the short-circuit current density compared to SBSCs without InAs QDs.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalThin Solid Films
Publication statusPublished - 2016 Apr 1


  • Gallium Arsenide
  • Indium Arsenide
  • Indiun tin oxide
  • Quantum dots
  • Schottky barrier
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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