Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (TFT-LCD) to reduce the number of fabrication steps. With In and Sn layers, contact-resistance values of 5 × 10-3-4 × 10-3 Ωcm2 were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3 × 10-5-4 × 10-4 Ωcm2)but lower than the values obtained from ITO/Si contacts (about 1 × 10-2 Ωcm2). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier.
- Contact resistance
- Diffusion barrier
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry