Indium-tin oxide/Si contacts with In- and Sn-diffusion barriers in polycrystalline Si thin-film transistor liquid-crystal displays

Hojin Ryu, Jinmo Kang, Younggun Han, Donghwan Kim, James Jungho Pak, Won Kyu Park, Myoung Su Yang

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Indium and tin were used as the diffusion barrier between indium-tin oxide (ITO) and polycrystalline-silicon layers to reduce the contact resistance. The ITO/Si contacts may be adopted in thin-film transistor liquid-crystal displays (TFT-LCD) to reduce the number of fabrication steps. With In and Sn layers, contact-resistance values of 5 × 10-3-4 × 10-3 Ωcm2 were obtained. These values were higher than those of the conventional ITO/Mo/Al/Si contacts (3 × 10-5-4 × 10-4 Ωcm2)but lower than the values obtained from ITO/Si contacts (about 1 × 10-2 Ωcm2). The Sn was stable after annealing, but In diffused into Si and lost its function as the diffusion barrier.

Original languageEnglish
Pages (from-to)919-924
Number of pages6
JournalJournal of Electronic Materials
Volume32
Issue number9
DOIs
Publication statusPublished - 2003 Sep

Keywords

  • Contact resistance
  • Diffusion barrier
  • ITO
  • In
  • Poly-Si
  • Sn
  • TFT-LCD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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