Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

Byung Jae Kim, Michael A. Mastro, Hyunjung Jung, Hong Yeol Kim, Sung Hyun Kim, Ron T. Holm, Jennifer Hite, Charles R. Eddy, Joona Bang, Ji Hyun Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl3 and Cl2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured.

Original languageEnglish
Pages (from-to)7744-7747
Number of pages4
JournalThin Solid Films
Volume516
Issue number21
DOIs
Publication statusPublished - 2008 Sep 1

Fingerprint

Plasma etching
Aluminum Oxide
Inductively coupled plasma
plasma etching
Sapphire
Light emitting diodes
sapphire
light emitting diodes
chips
Nanospheres
Substrates
circular cones
etching
Dry etching
Gas mixtures
gas mixtures
Cones
Masks
Luminance
Etching

Keywords

  • GaN
  • Light emitting diodes
  • Plasma etching
  • Sapphire
  • Surface texturing

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications. / Kim, Byung Jae; Mastro, Michael A.; Jung, Hyunjung; Kim, Hong Yeol; Kim, Sung Hyun; Holm, Ron T.; Hite, Jennifer; Eddy, Charles R.; Bang, Joona; Kim, Ji Hyun.

In: Thin Solid Films, Vol. 516, No. 21, 01.09.2008, p. 7744-7747.

Research output: Contribution to journalArticle

Kim, Byung Jae ; Mastro, Michael A. ; Jung, Hyunjung ; Kim, Hong Yeol ; Kim, Sung Hyun ; Holm, Ron T. ; Hite, Jennifer ; Eddy, Charles R. ; Bang, Joona ; Kim, Ji Hyun. / Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications. In: Thin Solid Films. 2008 ; Vol. 516, No. 21. pp. 7744-7747.
@article{2cf1e78542394409bcc9b41a7f3cf47d,
title = "Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications",
abstract = "The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl3 and Cl2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5{\%} in intensity after the surface of sapphire was textured.",
keywords = "GaN, Light emitting diodes, Plasma etching, Sapphire, Surface texturing",
author = "Kim, {Byung Jae} and Mastro, {Michael A.} and Hyunjung Jung and Kim, {Hong Yeol} and Kim, {Sung Hyun} and Holm, {Ron T.} and Jennifer Hite and Eddy, {Charles R.} and Joona Bang and Kim, {Ji Hyun}",
year = "2008",
month = "9",
day = "1",
doi = "10.1016/j.tsf.2008.05.046",
language = "English",
volume = "516",
pages = "7744--7747",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "21",

}

TY - JOUR

T1 - Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

AU - Kim, Byung Jae

AU - Mastro, Michael A.

AU - Jung, Hyunjung

AU - Kim, Hong Yeol

AU - Kim, Sung Hyun

AU - Holm, Ron T.

AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Bang, Joona

AU - Kim, Ji Hyun

PY - 2008/9/1

Y1 - 2008/9/1

N2 - The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl3 and Cl2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured.

AB - The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl3 and Cl2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured.

KW - GaN

KW - Light emitting diodes

KW - Plasma etching

KW - Sapphire

KW - Surface texturing

UR - http://www.scopus.com/inward/record.url?scp=49349094168&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49349094168&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.05.046

DO - 10.1016/j.tsf.2008.05.046

M3 - Article

AN - SCOPUS:49349094168

VL - 516

SP - 7744

EP - 7747

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 21

ER -