Inductively-coupled-plasma reactive ion etching of ZnO using BCl 3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO

Han Ki Kim, J. W. Bae, K. K. Kim, S. J. Park, Tae Yeon Seong, I. Adesida

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Inductively-coupled-plasma reactive ion etching (ICP-RIE) behaviour of ZnO has been investigated using BCl3-based plasmas; etch rates are studied as a function of plasma chemistry, ICP coil power and r.f. power. It is shown that compared with Cl2/Ar, Ar and CH4/H 2-based gas mixtures, pure BCl3 gas results in high etch rates, indicating that B and BCl radicals react with ZnO and form volatile compounds such as BxOy and/or BCl-O bond. It is further shown that the specific contact resistance as low as 1.5×10-5 Ωcm2 is obtained from Ti/Au contacts on the BCl3 plasma pretreated ZnO. Based on X-ray photoelectron spectroscopy results, possible mechanisms for the BCl3-pretreated improvement of ohmic properties are described.

Original languageEnglish
Pages (from-to)90-94
Number of pages5
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
Externally publishedYes

Keywords

  • BCl plasma
  • ICP-RIE
  • Ohmic contact
  • Surface roughness
  • ZnO

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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