Inductively coupled plasma reactive ion etching of ZnO using BCl 3-based plasmas

Han Ki Kim, J. W. Bae, T. K. Kim, K. K. Kim, Tae Yeon Seong, I. Adesida

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

A report on inductively coupled plasma (ICP) reactive ion etching of ZnO using BCl3-based plasmas, was presented. Etch rates were studied as a function of BCl3/Cl2/Ar chemistries, ICP coil power, working pressure and substrate temperature. It was shown that the BCl 3-based etching process produces negligible changes in the surface stoichiometry of ZnO.

Original languageEnglish
Pages (from-to)1273-1277
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
Publication statusPublished - 2003 Jul 1
Externally publishedYes

Fingerprint

Plasma etching
Reactive ion etching
Inductively coupled plasma
etching
Plasmas
Stoichiometry
Etching
ions
stoichiometry
Substrates
coils
chemistry
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Inductively coupled plasma reactive ion etching of ZnO using BCl 3-based plasmas. / Kim, Han Ki; Bae, J. W.; Kim, T. K.; Kim, K. K.; Seong, Tae Yeon; Adesida, I.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 01.07.2003, p. 1273-1277.

Research output: Contribution to journalArticle

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