Inductively coupled plasma reactive ion etching (ICP-RIE) of ZrO 2:H solid electrolyte films was investigated using BCl 3-based plasma. ZrO2:H etch rates were studied as a function of the BCl3/Ar chemistry, ICP coil power, bias voltage, and working pressure. Scanning electron microscopy and atomic force microscopy were employed to characterize the etch rate and root-mean-square surface roughness of etched samples. It was found that in comparison with Cl2-based gas mixtures, pure BCl3 plasma results in a high etch rate of ZrO 2:H layer, suggesting an abundance of B and BCl radicals made up of a volatile compound such as BxOy, BCl-O, and Zr-Cl bond. In addition, Auger electron spectroscopy analysis exhibits that the BCl 3-based etching process produces no change in surface stoichiometry of the ZrO2:H films.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry