Industrial 6 inch multicrystalline silicon solar cells fabricated using reactive ion etching with efficiency exceeding 18%

Ji Myung Shim, Hyun Woo Lee, Kyeong Yeon Cho, Eun Joo Lee, Ji Soo Kim, Ji Hyun Kong, Soo Jeong Jo, Ji Sun Kim, Hae Seok Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

To obtain a lower reflectance, we applied a maskless plasma texturing technique by reactive ion etching (RIE) to acid-textured multicrystalline silicon (mc-Si) wafer. RIE texturing produced a deep and narrow textured surface with an excellent low reflectance. Owing to plasma-induced damage, unless the RIE-textured surface is subjected to proper damage removal etching (DRE), it shows drops in open circuit voltage (V oc) and fill factor (FF). RIE-textured samples with proper DRE showed sufficiently higher short circuit current (I sc) than acid-textured samples without a drop in V oc. In this study, we applied RIE texturing under optimized DRE condition to the selective emitter structure. In comparison with the acidtextured solar cells, RIE-textured solar cells have absolute gains in I sc above 200 mA. We successfully fabricated a 6-in. mc-Si solar cell with a conversion efficiency exceeding 18% by applying selective emitter technology with RIE texturing.

Original languageEnglish
Article number10NA14
JournalJapanese journal of applied physics
Volume51
Issue number10 PART 2
DOIs
Publication statusPublished - 2012 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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