To obtain a lower reflectance, we applied a maskless plasma texturing technique by reactive ion etching (RIE) to acid-textured multicrystalline silicon (mc-Si) wafer. RIE texturing produced a deep and narrow textured surface with an excellent low reflectance. Owing to plasma-induced damage, unless the RIE-textured surface is subjected to proper damage removal etching (DRE), it shows drops in open circuit voltage (V oc) and fill factor (FF). RIE-textured samples with proper DRE showed sufficiently higher short circuit current (I sc) than acid-textured samples without a drop in V oc. In this study, we applied RIE texturing under optimized DRE condition to the selective emitter structure. In comparison with the acidtextured solar cells, RIE-textured solar cells have absolute gains in I sc above 200 mA. We successfully fabricated a 6-in. mc-Si solar cell with a conversion efficiency exceeding 18% by applying selective emitter technology with RIE texturing.
ASJC Scopus subject areas
- Physics and Astronomy(all)