Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers

S. Nigam, Ji Hyun Kim, B. Luo, F. Ren, G. Y. Chung, S. J. Pearton, J. R. Williams, K. Shenai, P. Neudeck

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

P-i-n 4H-SiC rectifiers with SiO2 passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n ∼ 1.97) and diffusion at high voltages (n ∼ 1.1). The forward turn-on voltage was ∼4 V, with a specific on-state resistance of 15 mΩ cm2, on/off current ratio of 1.5 × 105 at 3 V/-450 V and figure-of-merit, VB 2/RON, of 13.5 MW cm-2. The mesa extension distance did not have a strong impact on reverse breakdown voltage.

Original languageEnglish
Pages (from-to)61-64
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes

Fingerprint

rectifiers
mesas
Geometry
Electric potential
geometry
Electric breakdown
electrical faults
figure of merit
high voltages
electric potential
rice bran saccharide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers. / Nigam, S.; Kim, Ji Hyun; Luo, B.; Ren, F.; Chung, G. Y.; Pearton, S. J.; Williams, J. R.; Shenai, K.; Neudeck, P.

In: Solid-State Electronics, Vol. 47, No. 1, 01.01.2003, p. 61-64.

Research output: Contribution to journalArticle

Nigam, S, Kim, JH, Luo, B, Ren, F, Chung, GY, Pearton, SJ, Williams, JR, Shenai, K & Neudeck, P 2003, 'Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers', Solid-State Electronics, vol. 47, no. 1, pp. 61-64. https://doi.org/10.1016/S0038-1101(02)00272-1
Nigam, S. ; Kim, Ji Hyun ; Luo, B. ; Ren, F. ; Chung, G. Y. ; Pearton, S. J. ; Williams, J. R. ; Shenai, K. ; Neudeck, P. / Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers. In: Solid-State Electronics. 2003 ; Vol. 47, No. 1. pp. 61-64.
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