Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers

S. Nigam, Jihyun Kim, B. Luo, F. Ren, G. Y. Chung, S. J. Pearton, J. R. Williams, K. Shenai, P. Neudeck

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

P-i-n 4H-SiC rectifiers with SiO2 passivated mesa edge termination showed forward current characteristics dominated by recombination at low bias (n ∼ 1.97) and diffusion at high voltages (n ∼ 1.1). The forward turn-on voltage was ∼4 V, with a specific on-state resistance of 15 mΩ cm2, on/off current ratio of 1.5 × 105 at 3 V/-450 V and figure-of-merit, VB2/RON, of 13.5 MW cm-2. The mesa extension distance did not have a strong impact on reverse breakdown voltage.

Original languageEnglish
Pages (from-to)61-64
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Nigam, S., Kim, J., Luo, B., Ren, F., Chung, G. Y., Pearton, S. J., Williams, J. R., Shenai, K., & Neudeck, P. (2003). Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers. Solid-State Electronics, 47(1), 61-64. https://doi.org/10.1016/S0038-1101(02)00272-1