InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics