Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

K. C. Kim, Y. C. Choi, D. H. Kim, Tae Geun Kim, S. H. Yoon, C. S. Sone, Y. J. Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.

Original languageEnglish
Pages (from-to)2663-2667
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
Publication statusPublished - 2004 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes'. Together they form a unique fingerprint.

  • Cite this