Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes

K. C. Kim, Y. C. Choi, D. H. Kim, Tae Geun Kim, S. H. Yoon, C. S. Sone, Y. J. Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

InGaN-GaN multiple quantum well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) with and without n-AlGaN electron tunneling barriers (ETBs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), are characterized by comparison with device simulation results. Compared with a conventional LED without the ETB, one of the proposed LEDs with the optimized ETB shows an 11% increase in normalized photodiode (PD) currents. We contribute this improvement to the reduced number of hot electron overflowing to the p-side from MQW by low-energy electron tunneling, which is consistent with the simulation results regarding the carrier distributions.

Original languageEnglish
Pages (from-to)2663-2667
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
Publication statusPublished - 2004 Sep 1
Externally publishedYes

Fingerprint

Electron tunneling
electron tunneling
ultraviolet radiation
Light emitting diodes
light emitting diodes
Semiconductor quantum wells
quantum wells
Organic Chemicals
Hot electrons
Aluminum Oxide
Organic chemicals
Photodiodes
hot electrons
Sapphire
photodiodes
metalorganic chemical vapor deposition
Chemical vapor deposition
sapphire
simulation
Metals

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes. / Kim, K. C.; Choi, Y. C.; Kim, D. H.; Kim, Tae Geun; Yoon, S. H.; Sone, C. S.; Park, Y. J.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 12, 01.09.2004, p. 2663-2667.

Research output: Contribution to journalArticle

Kim, K. C. ; Choi, Y. C. ; Kim, D. H. ; Kim, Tae Geun ; Yoon, S. H. ; Sone, C. S. ; Park, Y. J. / Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes. In: Physica Status Solidi (A) Applied Research. 2004 ; Vol. 201, No. 12. pp. 2663-2667.
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