Abstract
As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 μm × 0.8 μm, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/ NiFe t (t = 3, 4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V were conducted to distinguish kinks originating from vortex and domain wall pinning. In addition, we measured samples at various temperatures (from room temperature to 500 K), and with various hard axis fields (from 0 to 90 Oe). As temperature increased, average switching fields decreased, more rapidly for t = 6 nm junctions, but kinks were not eliminated completely. When the hard axis field reached about 40-60 Oe, nearly kink-free switching was possible for t = 6 nm MTJs.
| Original language | English |
|---|---|
| Pages (from-to) | 883-886 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 41 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2005 Feb 1 |
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Keywords
- Hard-axis field
- Magnetoresistive random access memory (MRAM)
- Remanent-state
- Switching field
- Thermal effect
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays. / Lee, Yun Ki; Chun, Byong Sun; Kim, Young-geun; Hwang, Injun; Park, Wanjun; Kim, Taewan; Kim, Hongseog; Lee, Jangeun; Jeong, Won Cheol.
In: IEEE Transactions on Magnetics, Vol. 41, No. 2, 01.02.2005, p. 883-886.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays
AU - Lee, Yun Ki
AU - Chun, Byong Sun
AU - Kim, Young-geun
AU - Hwang, Injun
AU - Park, Wanjun
AU - Kim, Taewan
AU - Kim, Hongseog
AU - Lee, Jangeun
AU - Jeong, Won Cheol
PY - 2005/2/1
Y1 - 2005/2/1
N2 - As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 μm × 0.8 μm, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/ NiFe t (t = 3, 4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V were conducted to distinguish kinks originating from vortex and domain wall pinning. In addition, we measured samples at various temperatures (from room temperature to 500 K), and with various hard axis fields (from 0 to 90 Oe). As temperature increased, average switching fields decreased, more rapidly for t = 6 nm junctions, but kinks were not eliminated completely. When the hard axis field reached about 40-60 Oe, nearly kink-free switching was possible for t = 6 nm MTJs.
AB - As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 μm × 0.8 μm, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/ NiFe t (t = 3, 4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V were conducted to distinguish kinks originating from vortex and domain wall pinning. In addition, we measured samples at various temperatures (from room temperature to 500 K), and with various hard axis fields (from 0 to 90 Oe). As temperature increased, average switching fields decreased, more rapidly for t = 6 nm junctions, but kinks were not eliminated completely. When the hard axis field reached about 40-60 Oe, nearly kink-free switching was possible for t = 6 nm MTJs.
KW - Hard-axis field
KW - Magnetoresistive random access memory (MRAM)
KW - Remanent-state
KW - Switching field
KW - Thermal effect
UR - http://www.scopus.com/inward/record.url?scp=14544301387&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=14544301387&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2004.842079
DO - 10.1109/TMAG.2004.842079
M3 - Article
AN - SCOPUS:14544301387
VL - 41
SP - 883
EP - 886
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 2
ER -