Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays

Yun Ki Lee, Byong Sun Chun, Young Keun Kim, Injun Hwang, Wanjun Park, Taewan Kim, Hongseog Kim, Jangeun Lee, Won Cheol Jeong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 μm × 0.8 μm, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/ NiFe t (t = 3, 4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V were conducted to distinguish kinks originating from vortex and domain wall pinning. In addition, we measured samples at various temperatures (from room temperature to 500 K), and with various hard axis fields (from 0 to 90 Oe). As temperature increased, average switching fields decreased, more rapidly for t = 6 nm junctions, but kinks were not eliminated completely. When the hard axis field reached about 40-60 Oe, nearly kink-free switching was possible for t = 6 nm MTJs.

Original languageEnglish
Pages (from-to)883-886
Number of pages4
JournalIEEE Transactions on Magnetics
Volume41
Issue number2
DOIs
Publication statusPublished - 2005 Feb

Keywords

  • Hard-axis field
  • Magnetoresistive random access memory (MRAM)
  • Remanent-state
  • Switching field
  • Thermal effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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