Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays

Yun Ki Lee, Byong Sun Chun, Young-geun Kim, Injun Hwang, Wanjun Park, Taewan Kim, Hongseog Kim, Jangeun Lee, Won Cheol Jeong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 μm × 0.8 μm, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/ NiFe t (t = 3, 4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V were conducted to distinguish kinks originating from vortex and domain wall pinning. In addition, we measured samples at various temperatures (from room temperature to 500 K), and with various hard axis fields (from 0 to 90 Oe). As temperature increased, average switching fields decreased, more rapidly for t = 6 nm junctions, but kinks were not eliminated completely. When the hard axis field reached about 40-60 Oe, nearly kink-free switching was possible for t = 6 nm MTJs.

Original languageEnglish
Pages (from-to)883-886
Number of pages4
JournalIEEE Transactions on Magnetics
Volume41
Issue number2
DOIs
Publication statusPublished - 2005 Feb 1

Fingerprint

MRAM devices
Tunnel junctions
random access memory
tunnel junctions
Vortex flow
vortices
Domain walls
Temperature
domain wall
Magnetization
selectivity
magnetization
temperature
room temperature
cells

Keywords

  • Hard-axis field
  • Magnetoresistive random access memory (MRAM)
  • Remanent-state
  • Switching field
  • Thermal effect

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays. / Lee, Yun Ki; Chun, Byong Sun; Kim, Young-geun; Hwang, Injun; Park, Wanjun; Kim, Taewan; Kim, Hongseog; Lee, Jangeun; Jeong, Won Cheol.

In: IEEE Transactions on Magnetics, Vol. 41, No. 2, 01.02.2005, p. 883-886.

Research output: Contribution to journalArticle

Lee, Yun Ki ; Chun, Byong Sun ; Kim, Young-geun ; Hwang, Injun ; Park, Wanjun ; Kim, Taewan ; Kim, Hongseog ; Lee, Jangeun ; Jeong, Won Cheol. / Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays. In: IEEE Transactions on Magnetics. 2005 ; Vol. 41, No. 2. pp. 883-886.
@article{a52a8bb313644226b20f8417d7664c50,
title = "Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays",
abstract = "As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 μm × 0.8 μm, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/ NiFe t (t = 3, 4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V were conducted to distinguish kinks originating from vortex and domain wall pinning. In addition, we measured samples at various temperatures (from room temperature to 500 K), and with various hard axis fields (from 0 to 90 Oe). As temperature increased, average switching fields decreased, more rapidly for t = 6 nm junctions, but kinks were not eliminated completely. When the hard axis field reached about 40-60 Oe, nearly kink-free switching was possible for t = 6 nm MTJs.",
keywords = "Hard-axis field, Magnetoresistive random access memory (MRAM), Remanent-state, Switching field, Thermal effect",
author = "Lee, {Yun Ki} and Chun, {Byong Sun} and Young-geun Kim and Injun Hwang and Wanjun Park and Taewan Kim and Hongseog Kim and Jangeun Lee and Jeong, {Won Cheol}",
year = "2005",
month = "2",
day = "1",
doi = "10.1109/TMAG.2004.842079",
language = "English",
volume = "41",
pages = "883--886",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays

AU - Lee, Yun Ki

AU - Chun, Byong Sun

AU - Kim, Young-geun

AU - Hwang, Injun

AU - Park, Wanjun

AU - Kim, Taewan

AU - Kim, Hongseog

AU - Lee, Jangeun

AU - Jeong, Won Cheol

PY - 2005/2/1

Y1 - 2005/2/1

N2 - As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 μm × 0.8 μm, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/ NiFe t (t = 3, 4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V were conducted to distinguish kinks originating from vortex and domain wall pinning. In addition, we measured samples at various temperatures (from room temperature to 500 K), and with various hard axis fields (from 0 to 90 Oe). As temperature increased, average switching fields decreased, more rapidly for t = 6 nm junctions, but kinks were not eliminated completely. When the hard axis field reached about 40-60 Oe, nearly kink-free switching was possible for t = 6 nm MTJs.

AB - As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a magnetization vortex seriously interferes with switching selectivity. We prepared 0.3 μm × 0.8 μm, nearly rectangular shape MTJs consisted of PtMn/CoFe/Ru/CoFe/AlOx/ NiFe t (t = 3, 4.5, and 6 nm). Both at-field and remanent state measurements at 0.4 V were conducted to distinguish kinks originating from vortex and domain wall pinning. In addition, we measured samples at various temperatures (from room temperature to 500 K), and with various hard axis fields (from 0 to 90 Oe). As temperature increased, average switching fields decreased, more rapidly for t = 6 nm junctions, but kinks were not eliminated completely. When the hard axis field reached about 40-60 Oe, nearly kink-free switching was possible for t = 6 nm MTJs.

KW - Hard-axis field

KW - Magnetoresistive random access memory (MRAM)

KW - Remanent-state

KW - Switching field

KW - Thermal effect

UR - http://www.scopus.com/inward/record.url?scp=14544301387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14544301387&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2004.842079

DO - 10.1109/TMAG.2004.842079

M3 - Article

AN - SCOPUS:14544301387

VL - 41

SP - 883

EP - 886

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 2

ER -