Influence of gas mixture ratio on properties of SiNx: H films for Crystalline Silicon Solar Cells

K. Dong Lee, S. S. Dahiwale, Y. Do Kim, S. Kim, S. Bae, Sung Keun Park, S. Ju Tark, Donghwan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The Hydrogenated silicon nitride (SiN x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH 4+NH 3+N 2, SiH 4+NH 3, SiH 4+N 2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH 4+NH 3+N 2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH 4+NH 3+N 2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 %. The reason for the high efficiency using SiH 4+NH 3+N 2 is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

Original languageEnglish
Title of host publicationEnergy Procedia
PublisherElsevier BV
Pages419-425
Number of pages7
Volume27
DOIs
Publication statusPublished - 2012
Event2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012 - Leuven, Belgium
Duration: 2012 Apr 32012 Apr 5

Other

Other2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012
CountryBelgium
CityLeuven
Period12/4/312/4/5

Fingerprint

Silicon solar cells
Gas mixtures
Silicon nitride
Passivation
Crystalline materials
Antireflection coatings
Plasma enhanced chemical vapor deposition
Conversion efficiency
Surface properties
Fabrication
Substrates
Industry
Temperature

Keywords

  • Field effect
  • Gas mixture
  • Optical property
  • Passivation
  • Silicon nitride
  • Silicon solar cells

ASJC Scopus subject areas

  • Energy(all)

Cite this

Lee, K. D., Dahiwale, S. S., Kim, Y. D., Kim, S., Bae, S., Park, S. K., ... Kim, D. (2012). Influence of gas mixture ratio on properties of SiNx: H films for Crystalline Silicon Solar Cells. In Energy Procedia (Vol. 27, pp. 419-425). Elsevier BV. https://doi.org/10.1016/j.egypro.2012.07.087

Influence of gas mixture ratio on properties of SiNx : H films for Crystalline Silicon Solar Cells. / Lee, K. Dong; Dahiwale, S. S.; Kim, Y. Do; Kim, S.; Bae, S.; Park, Sung Keun; Tark, S. Ju; Kim, Donghwan.

Energy Procedia. Vol. 27 Elsevier BV, 2012. p. 419-425.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, KD, Dahiwale, SS, Kim, YD, Kim, S, Bae, S, Park, SK, Tark, SJ & Kim, D 2012, Influence of gas mixture ratio on properties of SiNx: H films for Crystalline Silicon Solar Cells. in Energy Procedia. vol. 27, Elsevier BV, pp. 419-425, 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012, Leuven, Belgium, 12/4/3. https://doi.org/10.1016/j.egypro.2012.07.087
Lee KD, Dahiwale SS, Kim YD, Kim S, Bae S, Park SK et al. Influence of gas mixture ratio on properties of SiNx: H films for Crystalline Silicon Solar Cells. In Energy Procedia. Vol. 27. Elsevier BV. 2012. p. 419-425 https://doi.org/10.1016/j.egypro.2012.07.087
Lee, K. Dong ; Dahiwale, S. S. ; Kim, Y. Do ; Kim, S. ; Bae, S. ; Park, Sung Keun ; Tark, S. Ju ; Kim, Donghwan. / Influence of gas mixture ratio on properties of SiNx : H films for Crystalline Silicon Solar Cells. Energy Procedia. Vol. 27 Elsevier BV, 2012. pp. 419-425
@inproceedings{edd99f054c2f44eca01c80186981e71a,
title = "Influence of gas mixture ratio on properties of SiNx: H films for Crystalline Silicon Solar Cells",
abstract = "The Hydrogenated silicon nitride (SiN x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH 4+NH 3+N 2, SiH 4+NH 3, SiH 4+N 2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH 4+NH 3+N 2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH 4+NH 3+N 2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 {\%}. The reason for the high efficiency using SiH 4+NH 3+N 2 is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.",
keywords = "Field effect, Gas mixture, Optical property, Passivation, Silicon nitride, Silicon solar cells",
author = "Lee, {K. Dong} and Dahiwale, {S. S.} and Kim, {Y. Do} and S. Kim and S. Bae and Park, {Sung Keun} and Tark, {S. Ju} and Donghwan Kim",
year = "2012",
doi = "10.1016/j.egypro.2012.07.087",
language = "English",
volume = "27",
pages = "419--425",
booktitle = "Energy Procedia",
publisher = "Elsevier BV",

}

TY - GEN

T1 - Influence of gas mixture ratio on properties of SiNx

T2 - H films for Crystalline Silicon Solar Cells

AU - Lee, K. Dong

AU - Dahiwale, S. S.

AU - Kim, Y. Do

AU - Kim, S.

AU - Bae, S.

AU - Park, Sung Keun

AU - Tark, S. Ju

AU - Kim, Donghwan

PY - 2012

Y1 - 2012

N2 - The Hydrogenated silicon nitride (SiN x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH 4+NH 3+N 2, SiH 4+NH 3, SiH 4+N 2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH 4+NH 3+N 2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH 4+NH 3+N 2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 %. The reason for the high efficiency using SiH 4+NH 3+N 2 is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

AB - The Hydrogenated silicon nitride (SiN x:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiN x:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH 4+NH 3+N 2, SiH 4+NH 3, SiH 4+N 2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. The film deposited with the gas mixture of SiH 4+NH 3+N 2 showed the best properties in before and after firing process conditions. The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH 4+NH 3+N 2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2 %. The reason for the high efficiency using SiH 4+NH 3+N 2 is because of the low film absorption coefficients (α) and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

KW - Field effect

KW - Gas mixture

KW - Optical property

KW - Passivation

KW - Silicon nitride

KW - Silicon solar cells

UR - http://www.scopus.com/inward/record.url?scp=84879952784&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879952784&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2012.07.087

DO - 10.1016/j.egypro.2012.07.087

M3 - Conference contribution

AN - SCOPUS:84879952784

VL - 27

SP - 419

EP - 425

BT - Energy Procedia

PB - Elsevier BV

ER -