Abstract
The influence of two different SiO2 and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type α,ω- dihexylsexithiophene and n-type N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO2 dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions.
| Original language | English |
|---|---|
| Article number | 084503 |
| Journal | Journal of Applied Physics |
| Volume | 109 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2011 Apr 15 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method. / Zhang, Ying; Seo, Hoon Seok; An, Min Jun; Oh, Jeong Do; Choi, Jong-Ho.
In: Journal of Applied Physics, Vol. 109, No. 8, 084503, 15.04.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method
AU - Zhang, Ying
AU - Seo, Hoon Seok
AU - An, Min Jun
AU - Oh, Jeong Do
AU - Choi, Jong-Ho
PY - 2011/4/15
Y1 - 2011/4/15
N2 - The influence of two different SiO2 and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type α,ω- dihexylsexithiophene and n-type N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO2 dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions.
AB - The influence of two different SiO2 and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type α,ω- dihexylsexithiophene and n-type N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO2 dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions.
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U2 - 10.1063/1.3573537
DO - 10.1063/1.3573537
M3 - Article
AN - SCOPUS:79955736632
VL - 109
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
M1 - 084503
ER -