Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method

Ying Zhang, Hoon Seok Seo, Min Jun An, Jeong Do Oh, Jong-Ho Choi

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13 Citations (Scopus)

Abstract

The influence of two different SiO2 and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type α,ω- dihexylsexithiophene and n-type N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO2 dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions.

Original languageEnglish
Article number084503
JournalJournal of Applied Physics
Volume109
Issue number8
DOIs
Publication statusPublished - 2011 Apr 15

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transistors
field effect transistors
electroluminescence
temperature dependence
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{d3d34796fb1e4f248aa117c7aa9fb91a,
title = "Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method",
abstract = "The influence of two different SiO2 and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type α,ω- dihexylsexithiophene and n-type N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO2 dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions.",
author = "Ying Zhang and Seo, {Hoon Seok} and An, {Min Jun} and Oh, {Jeong Do} and Jong-Ho Choi",
year = "2011",
month = "4",
day = "15",
doi = "10.1063/1.3573537",
language = "English",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Influence of gate dielectrics on the performance of single-layered organic transistors and bi-layered organic light-emitting transistors prepared by the neutral cluster beam deposition method

AU - Zhang, Ying

AU - Seo, Hoon Seok

AU - An, Min Jun

AU - Oh, Jeong Do

AU - Choi, Jong-Ho

PY - 2011/4/15

Y1 - 2011/4/15

N2 - The influence of two different SiO2 and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type α,ω- dihexylsexithiophene and n-type N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO2 dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions.

AB - The influence of two different SiO2 and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type α,ω- dihexylsexithiophene and n-type N,N′-ditridecylperylene-3,4,9,10- tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO2 dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions.

UR - http://www.scopus.com/inward/record.url?scp=79955736632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955736632&partnerID=8YFLogxK

U2 - 10.1063/1.3573537

DO - 10.1063/1.3573537

M3 - Article

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 084503

ER -