Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions

Gyu Don Kong, Miso Kim, Hyeon Jae Jang, Kung Ching Liao, Hyo Jae Yoon

Research output: Contribution to journalArticle

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Abstract

This paper examines the ability of structural modifications using halogen atoms (F, Cl, Br, and I) to influence tunneling rates across self-assembled monolayer (SAM)-based junctions having the structure Ag<sup>TS</sup>/S(CH<inf>2</inf>)<inf>n</inf>(p-C<inf>6</inf>H<inf>4</inf>X)//Ga<inf>2</inf>O<inf>3</inf>/EGaIn, where S(CH<inf>2</inf>)<inf>n</inf>(p-C<inf>6</inf>H<inf>4</inf>X) is a SAM of benzenethiol (n = 0) or benzyl mercaptan (n = 1) terminated in a hydrogen (X = H) or a halogen (X = F, Cl, Br, or I) at the para-position. The measured tunneling current densities (J(V); A cm<sup>-2</sup>) indicate that replacing a terminal hydrogen with a halogen atom at the X//Ga<inf>2</inf>O<inf>3</inf> interface leads to a decrease in J(V) by ∼×13 for S(p-C<inf>6</inf>H<inf>4</inf>X) and by ∼×50 for SCH<inf>2</inf>(p-C<inf>6</inf>H<inf>4</inf>X). Values of J(V) for the series of halogenated SAMs were indistinguishable, indicating that changes in dipole moment and polarizability caused by introducing different halogen atoms at the interface between the SAM and the Ga<inf>2</inf>O<inf>3</inf>/EGaIn electrode do not significantly influence the rates of charge tunneling across the junctions.

Original languageEnglish
Pages (from-to)13804-13807
Number of pages4
JournalPhysical Chemistry Chemical Physics
Volume17
Issue number21
DOIs
Publication statusPublished - 2015 Jun 7

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Halogens
Self assembled monolayers
halogens
Substitution reactions
substitutes
Atoms
Hydrogen
atoms
Dipole moment
hydrogen
Sulfhydryl Compounds
thiols
Electrodes
dipole moments
Current density
current density
electrodes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Physics and Astronomy(all)

Cite this

Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions. / Kong, Gyu Don; Kim, Miso; Jang, Hyeon Jae; Liao, Kung Ching; Yoon, Hyo Jae.

In: Physical Chemistry Chemical Physics, Vol. 17, No. 21, 07.06.2015, p. 13804-13807.

Research output: Contribution to journalArticle

Kong, Gyu Don ; Kim, Miso ; Jang, Hyeon Jae ; Liao, Kung Ching ; Yoon, Hyo Jae. / Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions. In: Physical Chemistry Chemical Physics. 2015 ; Vol. 17, No. 21. pp. 13804-13807.
@article{13b83fc3a6364cd99cd06a427d195ee6,
title = "Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions",
abstract = "This paper examines the ability of structural modifications using halogen atoms (F, Cl, Br, and I) to influence tunneling rates across self-assembled monolayer (SAM)-based junctions having the structure AgTS/S(CH2)n(p-C6H4X)//Ga2O3/EGaIn, where S(CH2)n(p-C6H4X) is a SAM of benzenethiol (n = 0) or benzyl mercaptan (n = 1) terminated in a hydrogen (X = H) or a halogen (X = F, Cl, Br, or I) at the para-position. The measured tunneling current densities (J(V); A cm-2) indicate that replacing a terminal hydrogen with a halogen atom at the X//Ga2O3 interface leads to a decrease in J(V) by ∼×13 for S(p-C6H4X) and by ∼×50 for SCH2(p-C6H4X). Values of J(V) for the series of halogenated SAMs were indistinguishable, indicating that changes in dipole moment and polarizability caused by introducing different halogen atoms at the interface between the SAM and the Ga2O3/EGaIn electrode do not significantly influence the rates of charge tunneling across the junctions.",
author = "Kong, {Gyu Don} and Miso Kim and Jang, {Hyeon Jae} and Liao, {Kung Ching} and Yoon, {Hyo Jae}",
year = "2015",
month = "6",
day = "7",
doi = "10.1039/c5cp00145e",
language = "English",
volume = "17",
pages = "13804--13807",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "21",

}

TY - JOUR

T1 - Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions

AU - Kong, Gyu Don

AU - Kim, Miso

AU - Jang, Hyeon Jae

AU - Liao, Kung Ching

AU - Yoon, Hyo Jae

PY - 2015/6/7

Y1 - 2015/6/7

N2 - This paper examines the ability of structural modifications using halogen atoms (F, Cl, Br, and I) to influence tunneling rates across self-assembled monolayer (SAM)-based junctions having the structure AgTS/S(CH2)n(p-C6H4X)//Ga2O3/EGaIn, where S(CH2)n(p-C6H4X) is a SAM of benzenethiol (n = 0) or benzyl mercaptan (n = 1) terminated in a hydrogen (X = H) or a halogen (X = F, Cl, Br, or I) at the para-position. The measured tunneling current densities (J(V); A cm-2) indicate that replacing a terminal hydrogen with a halogen atom at the X//Ga2O3 interface leads to a decrease in J(V) by ∼×13 for S(p-C6H4X) and by ∼×50 for SCH2(p-C6H4X). Values of J(V) for the series of halogenated SAMs were indistinguishable, indicating that changes in dipole moment and polarizability caused by introducing different halogen atoms at the interface between the SAM and the Ga2O3/EGaIn electrode do not significantly influence the rates of charge tunneling across the junctions.

AB - This paper examines the ability of structural modifications using halogen atoms (F, Cl, Br, and I) to influence tunneling rates across self-assembled monolayer (SAM)-based junctions having the structure AgTS/S(CH2)n(p-C6H4X)//Ga2O3/EGaIn, where S(CH2)n(p-C6H4X) is a SAM of benzenethiol (n = 0) or benzyl mercaptan (n = 1) terminated in a hydrogen (X = H) or a halogen (X = F, Cl, Br, or I) at the para-position. The measured tunneling current densities (J(V); A cm-2) indicate that replacing a terminal hydrogen with a halogen atom at the X//Ga2O3 interface leads to a decrease in J(V) by ∼×13 for S(p-C6H4X) and by ∼×50 for SCH2(p-C6H4X). Values of J(V) for the series of halogenated SAMs were indistinguishable, indicating that changes in dipole moment and polarizability caused by introducing different halogen atoms at the interface between the SAM and the Ga2O3/EGaIn electrode do not significantly influence the rates of charge tunneling across the junctions.

UR - http://www.scopus.com/inward/record.url?scp=84930227091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930227091&partnerID=8YFLogxK

U2 - 10.1039/c5cp00145e

DO - 10.1039/c5cp00145e

M3 - Article

AN - SCOPUS:84930227091

VL - 17

SP - 13804

EP - 13807

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 21

ER -