Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors

Gwangseok Yang, Soohwan Jang, Fan Ren, Stephen J. Pearton, Ji Hyun Kim

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of β-Ga2O3 nanobelts, whose energy band gap is ∼4.85 eV at room temperature. Back-gated field-effect transistor (FET) based on exfoliated quasi-two-dimensional β-Ga2O3 nanobelts were exposed to a 10 MeV proton beam. The proton-dose- and time-dependent characteristics of the radiation-damaged FETs were systematically analyzed. A 73% decrease in the field-effect mobility and a positive shift of the threshold voltage were observed after proton irradiation at a fluence of 2 × 1015 cm-2. Greater radiation-induced degradation occurs in the conductive channel of the β-Ga2O3 nanobelt than at the contact between the metal and β-Ga2O3. The on/off ratio of the exfoliated β-Ga2O3 FETs was maintained even after proton doses up to 2 × 1015 cm-2. The radiation-induced damage in the β-Ga2O3-based FETs was significantly recovered after rapid thermal annealing at 500 °C. The outstanding radiation durability of β-Ga2O3 renders it a promising building block for space applications.

Original languageEnglish
Pages (from-to)40471-40476
Number of pages6
JournalACS Applied Materials and Interfaces
Volume9
Issue number46
DOIs
Publication statusPublished - 2017 Nov 22

Fingerprint

Nanobelts
Proton irradiation
Field effect transistors
Radiation
Space applications
Protons
Energy gap
Proton beams
Rapid thermal annealing
Threshold voltage
Band structure
Dosimetry
Durability
Metals
Irradiation
Degradation

Keywords

  • gallium oxide
  • proton irradiation
  • thermal annealing
  • two-dimensional materials
  • wide-band gap semiconductors

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors. / Yang, Gwangseok; Jang, Soohwan; Ren, Fan; Pearton, Stephen J.; Kim, Ji Hyun.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 46, 22.11.2017, p. 40471-40476.

Research output: Contribution to journalArticle

Yang, Gwangseok ; Jang, Soohwan ; Ren, Fan ; Pearton, Stephen J. ; Kim, Ji Hyun. / Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 46. pp. 40471-40476.
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