Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes

Young Jin Jung, Seong Yong Cho, Jee Won Jung, Seiyong Kim, Jeong Hwan Lee

Research output: Contribution to journalLetter

Abstract

Metal halide perovskite light-emitting diodes (PeLEDs) are emerging as a promising candidate for next-generation optoelectronic devices. The efficiency of PeLEDs has developed explosively in a short time, but their overall efficiency is still low. This is strongly related to the high refractive indexes of indium-tin-oxide (ITO) and perovskite emitting layers. Various outcoupling strategies are being introduced to outcouple the light trapped inside the layers. However, the proposed methods have experimental challenges that need to be overcome for application to large-area electronics. Based on optical simulations, we demonstrate that the thicknesses of the ITO and perovskite layers are key parameters to improve the outcoupling efficiency of PeLEDs. In addition, the optical energy losses of PeLEDs can be reduced significantly by properly adjusting the thicknesses of the two layers. This leads to outstanding optical performance with a maximum EQE greater than 20% without using any other external outcoupling strategies.

Original languageEnglish
Article number26
JournalNano Convergence
Volume6
Issue number1
DOIs
Publication statusPublished - 2019 Dec 1

Fingerprint

Tin oxides
Perovskite
Indium
Light emitting diodes
Metal halides
Optoelectronic devices
perovskite
indium tin oxide
Refractive index
Energy dissipation
Electronic equipment

Keywords

  • ITO thickness
  • Outcoupling
  • Perovskite light-emitting diode
  • Refractive index

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes. / Jung, Young Jin; Cho, Seong Yong; Jung, Jee Won; Kim, Seiyong; Lee, Jeong Hwan.

In: Nano Convergence, Vol. 6, No. 1, 26, 01.12.2019.

Research output: Contribution to journalLetter

Jung, Young Jin ; Cho, Seong Yong ; Jung, Jee Won ; Kim, Seiyong ; Lee, Jeong Hwan. / Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes. In: Nano Convergence. 2019 ; Vol. 6, No. 1.
@article{2820322e07bc4f2fa7827dba0bf9e52c,
title = "Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes",
abstract = "Metal halide perovskite light-emitting diodes (PeLEDs) are emerging as a promising candidate for next-generation optoelectronic devices. The efficiency of PeLEDs has developed explosively in a short time, but their overall efficiency is still low. This is strongly related to the high refractive indexes of indium-tin-oxide (ITO) and perovskite emitting layers. Various outcoupling strategies are being introduced to outcouple the light trapped inside the layers. However, the proposed methods have experimental challenges that need to be overcome for application to large-area electronics. Based on optical simulations, we demonstrate that the thicknesses of the ITO and perovskite layers are key parameters to improve the outcoupling efficiency of PeLEDs. In addition, the optical energy losses of PeLEDs can be reduced significantly by properly adjusting the thicknesses of the two layers. This leads to outstanding optical performance with a maximum EQE greater than 20{\%} without using any other external outcoupling strategies.",
keywords = "ITO thickness, Outcoupling, Perovskite light-emitting diode, Refractive index",
author = "Jung, {Young Jin} and Cho, {Seong Yong} and Jung, {Jee Won} and Seiyong Kim and Lee, {Jeong Hwan}",
year = "2019",
month = "12",
day = "1",
doi = "10.1186/s40580-019-0196-z",
language = "English",
volume = "6",
journal = "Nano Convergence",
issn = "2196-5404",
publisher = "Springer Open",
number = "1",

}

TY - JOUR

T1 - Influence of indium-tin-oxide and emitting-layer thicknesses on light outcoupling of perovskite light-emitting diodes

AU - Jung, Young Jin

AU - Cho, Seong Yong

AU - Jung, Jee Won

AU - Kim, Seiyong

AU - Lee, Jeong Hwan

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Metal halide perovskite light-emitting diodes (PeLEDs) are emerging as a promising candidate for next-generation optoelectronic devices. The efficiency of PeLEDs has developed explosively in a short time, but their overall efficiency is still low. This is strongly related to the high refractive indexes of indium-tin-oxide (ITO) and perovskite emitting layers. Various outcoupling strategies are being introduced to outcouple the light trapped inside the layers. However, the proposed methods have experimental challenges that need to be overcome for application to large-area electronics. Based on optical simulations, we demonstrate that the thicknesses of the ITO and perovskite layers are key parameters to improve the outcoupling efficiency of PeLEDs. In addition, the optical energy losses of PeLEDs can be reduced significantly by properly adjusting the thicknesses of the two layers. This leads to outstanding optical performance with a maximum EQE greater than 20% without using any other external outcoupling strategies.

AB - Metal halide perovskite light-emitting diodes (PeLEDs) are emerging as a promising candidate for next-generation optoelectronic devices. The efficiency of PeLEDs has developed explosively in a short time, but their overall efficiency is still low. This is strongly related to the high refractive indexes of indium-tin-oxide (ITO) and perovskite emitting layers. Various outcoupling strategies are being introduced to outcouple the light trapped inside the layers. However, the proposed methods have experimental challenges that need to be overcome for application to large-area electronics. Based on optical simulations, we demonstrate that the thicknesses of the ITO and perovskite layers are key parameters to improve the outcoupling efficiency of PeLEDs. In addition, the optical energy losses of PeLEDs can be reduced significantly by properly adjusting the thicknesses of the two layers. This leads to outstanding optical performance with a maximum EQE greater than 20% without using any other external outcoupling strategies.

KW - ITO thickness

KW - Outcoupling

KW - Perovskite light-emitting diode

KW - Refractive index

UR - http://www.scopus.com/inward/record.url?scp=85070381608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070381608&partnerID=8YFLogxK

U2 - 10.1186/s40580-019-0196-z

DO - 10.1186/s40580-019-0196-z

M3 - Letter

VL - 6

JO - Nano Convergence

JF - Nano Convergence

SN - 2196-5404

IS - 1

M1 - 26

ER -