Influence of insulating barrier thickness on the magnetoresistance properties of a magnetic tunnel junction with Zr-alloyed Al oxide barrier

Chul Min Choi, Seong Rae Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have investigated the magnetoresistive properties and thermal and electrical stability of a magnetic tunnel junction (MTJ) with a high-quality, ultra-thin Zr-alloyed Al oxide (ZrAl oxide) barrier of below 1.0 nm. We obtained the highest bias voltage and breakdown voltage of 711 mV and 1.75 V for a 1.6-nm-thick barrier. The resistance drops from 1850 Ω to 72 Ω as the ZrAl thickness decreases from 1.6 to 0.6 nm, respectively. A significant TMR (Tunneling Magneto-resistance) value of 17% and a junction resistance of 98 Ω were obtained for a MTJ with a ZrAl oxide barrier thickness of 0.8 nm.

Original languageEnglish
Pages (from-to)1704-1707
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number8
DOIs
Publication statusPublished - 2004 Jun 1

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Tunnel junctions
Magnetoresistance
tunnel junctions
Oxides
Tunnelling magnetoresistance
oxides
Bias voltage
Electric breakdown
electrical faults
thermal stability
electric potential
Hot Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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N2 - We have investigated the magnetoresistive properties and thermal and electrical stability of a magnetic tunnel junction (MTJ) with a high-quality, ultra-thin Zr-alloyed Al oxide (ZrAl oxide) barrier of below 1.0 nm. We obtained the highest bias voltage and breakdown voltage of 711 mV and 1.75 V for a 1.6-nm-thick barrier. The resistance drops from 1850 Ω to 72 Ω as the ZrAl thickness decreases from 1.6 to 0.6 nm, respectively. A significant TMR (Tunneling Magneto-resistance) value of 17% and a junction resistance of 98 Ω were obtained for a MTJ with a ZrAl oxide barrier thickness of 0.8 nm.

AB - We have investigated the magnetoresistive properties and thermal and electrical stability of a magnetic tunnel junction (MTJ) with a high-quality, ultra-thin Zr-alloyed Al oxide (ZrAl oxide) barrier of below 1.0 nm. We obtained the highest bias voltage and breakdown voltage of 711 mV and 1.75 V for a 1.6-nm-thick barrier. The resistance drops from 1850 Ω to 72 Ω as the ZrAl thickness decreases from 1.6 to 0.6 nm, respectively. A significant TMR (Tunneling Magneto-resistance) value of 17% and a junction resistance of 98 Ω were obtained for a MTJ with a ZrAl oxide barrier thickness of 0.8 nm.

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