Influence of intentionally strained sapphire substrate on GaN epilayers

Jaekyun Kim, Young Ju Park, Dong Jin Byun, Junggeun Jhin, Mingu Kang, Eui Kwan Koh, Youngboo Moon, Suk Ki Min

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD) were investigated. Intentionally tensile strained sapphire substrates were prepared by the implantation of 2.4 MeV energy Cl + and As+-ions with a 1015cm-2 dose where the projection ranges (Rp) were 1.16 μm and 0.95 μm, respectively. It was found from Raman spectroscopy that the compressive stress normally existed in the GaN epilayer/sapphire was decreased by the use of a Cl+-ion-implanted sapphire substrate. The intentionally tensile strained sapphire surface can result in a superior crystalline GaN epilayer on top of it. However, excessively roughened and modified surface by As +-ions degraded the GaN epilayer. Not only the ionic radius but also the chemical species of implanted ions in sapphire affected the crystal quality of GaN epilayers. Therefore, we concluded that the properly tensile-strained sapphire (0001) substrate could improve the properties of GaN epilayers grown by MOCVD.

Original languageEnglish
Pages (from-to)3991-3994
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 B
Publication statusPublished - 2003 Jun 1

Keywords

  • GaN
  • Ion implantation
  • MOCVD
  • Tensile-strained sapphire

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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