Influence of intentionally strained sapphire substrate on GaN epilayers

Jaekyun Kim, Young Ju Park, Dong Jin Byun, Eui Kwan Koh, Eun Kyu Kim, Suk Ki Min

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates were investigated. In general, sapphire substrate experiences the tensile stress whereas GaN epilayer experience the compressive stress in the case of GaN/sapphire system. To examine the effects of intentionally strained sapphire substrate on the GaN epilayers, it was obliquely implanted with 2.4 MeV energy Cl+ and As+ ions to 1015 cm-1 dose where TRIM-simulated projection ranges (Rp) are 1.16 and 0.95 μm, respectively. Cl+ ion implantation is expected to generate the lower strain field within the sapphire substrate, since it has smaller ionic radius (rCl+ <rAs+) and deeper Rp (Rp Cl+ > Rp As+) than the As+. To recover the disordered sapphire surface caused by implants, rapid thermal annealing was performed. After that, GaN epilayers were deposited on the low temperature GaN buffer layers grown by metal organic chemical vapor deposition (MOCVD) technique.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages230-231
Number of pages2
ISBN (Print)4891140313, 9784891140311
DOIs
Publication statusPublished - 2002
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: 2002 Nov 62002 Nov 8

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period02/11/602/11/8

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Kim, J., Park, Y. J., Byun, D. J., Koh, E. K., Kim, E. K., & Min, S. K. (2002). Influence of intentionally strained sapphire substrate on GaN epilayers. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 230-231). [1178628] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178628