Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study

T. X. Wang; Y. Li; Kyoung Jin Lee; J. U. Cho; D. K. Kim; S. J. Noh; Y. K. Kim

doi:10.1063/1.3575337

Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study

T. X. Wang, Y. Li, Kyoung Jin Lee, J. U. Cho, D. K. Kim, S. J. Noh, Y. K. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments.

Original language	English
Article number	083714
Journal	Journal of Applied Physics
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.3575337
Publication status	Published - 2011 Apr 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3575337

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title = "Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study",

abstract = "The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments.",

author = "Wang, {T. X.} and Y. Li and Lee, {Kyoung Jin} and Cho, {J. U.} and Kim, {D. K.} and Noh, {S. J.} and Kim, {Y. K.}",

note = "Funding Information: This work is supported by the Scientific Research Foundation for Youth of Henan Normal University (No. 01026400017), the Nature Science Foundation of Hebei Province, China (No. A2010000013), the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab of the Korean government (MOST) (No. M60501000045-05A0100-04510), and the Ministry of Science and Technology (No. M10500000105-05J0000-10510).",

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doi = "10.1063/1.3575337",

language = "English",

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TY - JOUR

T1 - Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system

T2 - C modified interfaces-a first principle study

AU - Wang, T. X.

AU - Li, Y.

AU - Lee, Kyoung Jin

AU - Cho, J. U.

AU - Kim, D. K.

AU - Noh, S. J.

AU - Kim, Y. K.

N1 - Funding Information: This work is supported by the Scientific Research Foundation for Youth of Henan Normal University (No. 01026400017), the Nature Science Foundation of Hebei Province, China (No. A2010000013), the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab of the Korean government (MOST) (No. M60501000045-05A0100-04510), and the Ministry of Science and Technology (No. M10500000105-05J0000-10510).

PY - 2011/4/15

Y1 - 2011/4/15

N2 - The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments.

AB - The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments.

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DO - 10.1063/1.3575337

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Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study

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