Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study

T. X. Wang, Y. Li, Kyoung Jin Lee, J. U. Cho, D. K. Kim, S. J. Noh, Young-geun Kim

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6 Citations (Scopus)

Abstract

The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments.

Original languageEnglish
Article number083714
JournalJournal of Applied Physics
Volume109
Issue number8
DOIs
Publication statusPublished - 2011 Apr 15

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tunnel junctions
barrier layers
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system : C modified interfaces-a first principle study. / Wang, T. X.; Li, Y.; Lee, Kyoung Jin; Cho, J. U.; Kim, D. K.; Noh, S. J.; Kim, Young-geun.

In: Journal of Applied Physics, Vol. 109, No. 8, 083714, 15.04.2011.

Research output: Contribution to journalArticle

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