Influence of laser damage on the performance of selective emitter solar cell fabricated using laser doping process

Myungsu Kim, Donghwan Kim, Dongseop Kim, Yoon Mook Kang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This article investigates the impact of laser damage on the performance of a selective emitter solar cell fabricated using a laser doping process (LD). After the optimization of the laser doping process, an amorphous silicon layer with a thickness of approximately 100 Å was observed on the laser-doped emitter. The amorphous laser damage decreased the power conversion efficiency due to poor contact between the Ag front electrode and the selective emitter. To effectively improve the quality of the front contacts, a solution etch-back process was applied after the laser doping step (LEB), and the series resistance of the selective emitter solar cell was restored to 0.55 Ω cm2 from around 1.0 Ω cm2. The contact formation during the LEB process clearly improved, and it was verified by comparing the densities of the Ag crystallites after Ag electrode removal from the LEB cell and the LD cell. The improvement in the formation of the front contact resulted in the LEB selective emitter solar cell recording a maximum 19.16% of power conversion efficiency, with a standard deviation of 0.055.

Original languageEnglish
Pages (from-to)215-220
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume132
DOIs
Publication statusPublished - 2014 Jan 1

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Laser damage
Solar cells
Doping (additives)
Lasers
Conversion efficiency
Electrodes
Amorphous silicon
Crystallites
Contacts (fluid mechanics)

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Influence of laser damage on the performance of selective emitter solar cell fabricated using laser doping process. / Kim, Myungsu; Kim, Donghwan; Kim, Dongseop; Kang, Yoon Mook.

In: Solar Energy Materials and Solar Cells, Vol. 132, 01.01.2014, p. 215-220.

Research output: Contribution to journalArticle

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abstract = "This article investigates the impact of laser damage on the performance of a selective emitter solar cell fabricated using a laser doping process (LD). After the optimization of the laser doping process, an amorphous silicon layer with a thickness of approximately 100 {\AA} was observed on the laser-doped emitter. The amorphous laser damage decreased the power conversion efficiency due to poor contact between the Ag front electrode and the selective emitter. To effectively improve the quality of the front contacts, a solution etch-back process was applied after the laser doping step (LEB), and the series resistance of the selective emitter solar cell was restored to 0.55 Ω cm2 from around 1.0 Ω cm2. The contact formation during the LEB process clearly improved, and it was verified by comparing the densities of the Ag crystallites after Ag electrode removal from the LEB cell and the LD cell. The improvement in the formation of the front contact resulted in the LEB selective emitter solar cell recording a maximum 19.16{\%} of power conversion efficiency, with a standard deviation of 0.055.",
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N2 - This article investigates the impact of laser damage on the performance of a selective emitter solar cell fabricated using a laser doping process (LD). After the optimization of the laser doping process, an amorphous silicon layer with a thickness of approximately 100 Å was observed on the laser-doped emitter. The amorphous laser damage decreased the power conversion efficiency due to poor contact between the Ag front electrode and the selective emitter. To effectively improve the quality of the front contacts, a solution etch-back process was applied after the laser doping step (LEB), and the series resistance of the selective emitter solar cell was restored to 0.55 Ω cm2 from around 1.0 Ω cm2. The contact formation during the LEB process clearly improved, and it was verified by comparing the densities of the Ag crystallites after Ag electrode removal from the LEB cell and the LD cell. The improvement in the formation of the front contact resulted in the LEB selective emitter solar cell recording a maximum 19.16% of power conversion efficiency, with a standard deviation of 0.055.

AB - This article investigates the impact of laser damage on the performance of a selective emitter solar cell fabricated using a laser doping process (LD). After the optimization of the laser doping process, an amorphous silicon layer with a thickness of approximately 100 Å was observed on the laser-doped emitter. The amorphous laser damage decreased the power conversion efficiency due to poor contact between the Ag front electrode and the selective emitter. To effectively improve the quality of the front contacts, a solution etch-back process was applied after the laser doping step (LEB), and the series resistance of the selective emitter solar cell was restored to 0.55 Ω cm2 from around 1.0 Ω cm2. The contact formation during the LEB process clearly improved, and it was verified by comparing the densities of the Ag crystallites after Ag electrode removal from the LEB cell and the LD cell. The improvement in the formation of the front contact resulted in the LEB selective emitter solar cell recording a maximum 19.16% of power conversion efficiency, with a standard deviation of 0.055.

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