Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, J. Han

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Abstract

Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100°C) layers of MgO or Sc 2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability.

Original languageEnglish
Pages (from-to)1661-1663
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number9
DOIs
Publication statusPublished - 2002 Mar 4
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C., & Han, J. (2002). Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 80(9), 1661-1663. https://doi.org/10.1063/1.1455692