The effect of the deposition conditions of plasma enhanced chemical vapor deposition (PECVD) SiO2 layers on the electrical properties of 4H-SiC Schottky rectifiers is reported. In a SiH4/N2O plasma chemistry, the reverse breakdown voltage, forward turn-on voltage, and on-state resistance of the rectifiers all increase with increasing plasma power and SiH4 content and decreasing deposition pressure. The maximum changes in all these parameters were ≤20% over a broad range of plasma conditions and show that 4H-SiC is relatively resistant to changes induced by the ion bombardment and high atomic hydrogen flux present during PECVD of dielectrics for surface passivation.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering