Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers

S. Nigam, Jihyun Kim, F. Ren, G. Chung, M. F. MacMillan, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The effect of the deposition conditions of plasma enhanced chemical vapor deposition (PECVD) SiO2 layers on the electrical properties of 4H-SiC Schottky rectifiers is reported. In a SiH4/N2O plasma chemistry, the reverse breakdown voltage, forward turn-on voltage, and on-state resistance of the rectifiers all increase with increasing plasma power and SiH4 content and decreasing deposition pressure. The maximum changes in all these parameters were ≤20% over a broad range of plasma conditions and show that 4H-SiC is relatively resistant to changes induced by the ion bombardment and high atomic hydrogen flux present during PECVD of dielectrics for surface passivation.

Original languageEnglish
Pages (from-to)G4-G6
JournalElectrochemical and Solid-State Letters
Issue number1
Publication statusPublished - 2003 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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