Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers

S. Nigam, Ji Hyun Kim, F. Ren, G. Chung, M. F. MacMillan, S. J. Pearton

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of the deposition conditions of plasma enhanced chemical vapor deposition (PECVD) SiO2 layers on the electrical properties of 4H-SiC Schottky rectifiers is reported. In a SiH4/N2O plasma chemistry, the reverse breakdown voltage, forward turn-on voltage, and on-state resistance of the rectifiers all increase with increasing plasma power and SiH4 content and decreasing deposition pressure. The maximum changes in all these parameters were ≤20% over a broad range of plasma conditions and show that 4H-SiC is relatively resistant to changes induced by the ion bombardment and high atomic hydrogen flux present during PECVD of dielectrics for surface passivation.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume6
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes

Fingerprint

rectifiers
Plasma enhanced chemical vapor deposition
Passivation
passivity
vapor deposition
Plasmas
Ion bombardment
Electric breakdown
plasma chemistry
Hydrogen
Electric properties
electrical faults
Fluxes
bombardment
electrical properties
Electric potential
electric potential
hydrogen
ions

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers. / Nigam, S.; Kim, Ji Hyun; Ren, F.; Chung, G.; MacMillan, M. F.; Pearton, S. J.

In: Electrochemical and Solid-State Letters, Vol. 6, No. 1, 01.01.2003.

Research output: Contribution to journalArticle

Nigam, S. ; Kim, Ji Hyun ; Ren, F. ; Chung, G. ; MacMillan, M. F. ; Pearton, S. J. / Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers. In: Electrochemical and Solid-State Letters. 2003 ; Vol. 6, No. 1.
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