Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations

Yeong Deuk Jo, Jung Hyuk Koh, Jae Geun Ha, Ji Hong Kim, Dae Hyung Cho, Byung-Moo Moon, Sang Mo Koo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Au/SiO2/n-Si metal-oxide-silicon-on-insulator (MOSOI) capacitors were fabricated to study the damage caused by reactive ion etching (RIE) on (1 1 0) oriented silicon-on-insulator (SOI) substrates. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measurements revealed that C-V curves significantly change and a negative voltage shift occurs for plasma-damaged capacitors. The simulated band diagram profiles and potential distribution of the corresponding structures indicate that the C-V shift is mainly due to the removal of a parasitic depletion capacitance (Cp) in the substrate, when the interface charges (Qf) are present at the gate oxide/SOI interface. For etch-damaged MOSOI samples, the surface roughness and the interface charges (Qf) have been found to increase by ∼1.94 × 1012 cm-2 with respect to the reference devices, whereas the increase was reduced for sacrificial-oxidation treated samples, which implies a recovery from the plasma-induced etch damage on SOI structures.

Original languageEnglish
Article number125005
JournalSemiconductor Science and Technology
Volume24
Issue number12
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

Capacitance measurement
Interface states
Voltage measurement
Silicon oxides
Silicon
electrical measurement
capacitance
insulators
damage
Plasmas
Capacitors
Capacitance
Metals
silicon
Electric potential
simulation
metal oxides
capacitors
Oxidation
Reactive ion etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations. / Jo, Yeong Deuk; Koh, Jung Hyuk; Ha, Jae Geun; Kim, Ji Hong; Cho, Dae Hyung; Moon, Byung-Moo; Koo, Sang Mo.

In: Semiconductor Science and Technology, Vol. 24, No. 12, 125005, 01.12.2009.

Research output: Contribution to journalArticle

Jo, Yeong Deuk ; Koh, Jung Hyuk ; Ha, Jae Geun ; Kim, Ji Hong ; Cho, Dae Hyung ; Moon, Byung-Moo ; Koo, Sang Mo. / Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations. In: Semiconductor Science and Technology. 2009 ; Vol. 24, No. 12.
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