Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

Hee Dong Kim, Ho Myoung An, Kyoung Chan Kim, Yu Jeong Seo, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 1018 cm-3 was observed with ideal trap distributions for the same sample by capacitance-voltage (C-V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device.

Original languageEnglish
Article number075046
JournalSemiconductor Science and Technology
Volume23
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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