Influence of seed layers on microstructure and electrical properties of indium-tin oxide films

Younggun Han, Donghwan Kim, Jun Sik Cho, Seok Keun Koh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The change of microstructure of ITO films with deposition condition combination was studied. The initial stage of double-layer ITO films effectively determined the microstructure and the preferred orientation of the total film. By comparing double- and single-layer ITO films, the electrical properties did not change regardless of the type of microstructure, domain, or grain structure.

Original languageEnglish
Pages (from-to)288-292
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number1 SPEC.
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

Tin oxides
indium oxides
Indium
tin oxides
Oxide films
Seed
oxide films
seeds
Electric properties
ITO (semiconductors)
electrical properties
microstructure
Microstructure
Crystal microstructure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Influence of seed layers on microstructure and electrical properties of indium-tin oxide films. / Han, Younggun; Kim, Donghwan; Cho, Jun Sik; Koh, Seok Keun.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 1 SPEC., 01.01.2003, p. 288-292.

Research output: Contribution to journalArticle

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