Bi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO 2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.
|Number of pages||7|
|Journal||Materials Research Society Symposium Proceedings|
|Publication status||Published - 2005 Dec 1|
|Event||2005 Materials Research Society Spring Meeting - San Francisco, CA, United States|
Duration: 2005 Mar 28 → 2005 Apr 1
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials