Influence of stress on structural and dielectric anomaly of Bi 2(Zn1/3Ta2/3)2O7 thin films

Jun Hong Noh, Hee Bum Hong, Kug Sun Hong

Research output: Contribution to journalConference article

Abstract

Bi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO 2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

Original languageEnglish
Article numberO12.15
Pages (from-to)369-375
Number of pages7
JournalMaterials Research Society Symposium Proceedings
Volume875
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 2005 Mar 282005 Apr 1

Fingerprint

residual stress
Residual stresses
anomalies
Oxygen
high pressure oxygen
Thin films
Lattice mismatch
Pulsed laser deposition
thin films
Partial pressure
pulsed laser deposition
partial pressure
oxygen
Substrates
Chemical analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Influence of stress on structural and dielectric anomaly of Bi 2(Zn1/3Ta2/3)2O7 thin films. / Noh, Jun Hong; Hong, Hee Bum; Hong, Kug Sun.

In: Materials Research Society Symposium Proceedings, Vol. 875, O12.15, 01.12.2005, p. 369-375.

Research output: Contribution to journalConference article

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AB - Bi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO 2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

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