Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors

Kihyun Kim, Geunwoo Jeng, Pilsu Kim, Jonghak Choi, A. E. Bolotnikov, G. S. Camarda, R. B. James

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The detector performance and presence of Te secondary-phase defects distribution were investigated in CdMnTe (CMT) crystals prepared with different cooling rates. Detectors fabricated from fast-cooled CMT crystals exhibit a relatively poor detector performance, although IR transmission microscopy measurements show that the Te secondary-phase defects have a lower concentration and smaller size compared to slow-cooled crystals. Current deep-level transient spectroscopy (I-DLTS) measurements for both CMT detectors reveal the same trap levels, but there is a clear difference in the densities for the 0.26- and 0.42-eV traps for the two different cooling schemes. These two traps are probably attributed to Cd vacancies and Te anti-site defects, respectively. In addition, there is some likelihood that the traps are anti-correlated with respect to each other.

Original languageEnglish
Article number063706
JournalJournal of Applied Physics
Volume114
Issue number6
DOIs
Publication statusPublished - 2013 Aug 14

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traps
cooling
detectors
defects
crystals
low concentrations
microscopy
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors. / Kim, Kihyun; Jeng, Geunwoo; Kim, Pilsu; Choi, Jonghak; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

In: Journal of Applied Physics, Vol. 114, No. 6, 063706, 14.08.2013.

Research output: Contribution to journalArticle

Kim, Kihyun ; Jeng, Geunwoo ; Kim, Pilsu ; Choi, Jonghak ; Bolotnikov, A. E. ; Camarda, G. S. ; James, R. B. / Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors. In: Journal of Applied Physics. 2013 ; Vol. 114, No. 6.
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