Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors

Kihyun Kim; Geunwoo Jeng; Pilsu Kim; Jonghak Choi; A. E. Bolotnikov; G. S. Camarda; R. B. James

doi:10.1063/1.4817869

Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors

Kihyun Kim, Geunwoo Jeng, Pilsu Kim, Jonghak Choi, A. E. Bolotnikov, G. S. Camarda, R. B. James

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The detector performance and presence of Te secondary-phase defects distribution were investigated in CdMnTe (CMT) crystals prepared with different cooling rates. Detectors fabricated from fast-cooled CMT crystals exhibit a relatively poor detector performance, although IR transmission microscopy measurements show that the Te secondary-phase defects have a lower concentration and smaller size compared to slow-cooled crystals. Current deep-level transient spectroscopy (I-DLTS) measurements for both CMT detectors reveal the same trap levels, but there is a clear difference in the densities for the 0.26- and 0.42-eV traps for the two different cooling schemes. These two traps are probably attributed to Cd vacancies and Te anti-site defects, respectively. In addition, there is some likelihood that the traps are anti-correlated with respect to each other.

Original language	English
Article number	063706
Journal	Journal of Applied Physics
Volume	114
Issue number	6
DOIs	https://doi.org/10.1063/1.4817869
Publication status	Published - 2013 Aug 14

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors",

abstract = "The detector performance and presence of Te secondary-phase defects distribution were investigated in CdMnTe (CMT) crystals prepared with different cooling rates. Detectors fabricated from fast-cooled CMT crystals exhibit a relatively poor detector performance, although IR transmission microscopy measurements show that the Te secondary-phase defects have a lower concentration and smaller size compared to slow-cooled crystals. Current deep-level transient spectroscopy (I-DLTS) measurements for both CMT detectors reveal the same trap levels, but there is a clear difference in the densities for the 0.26- and 0.42-eV traps for the two different cooling schemes. These two traps are probably attributed to Cd vacancies and Te anti-site defects, respectively. In addition, there is some likelihood that the traps are anti-correlated with respect to each other.",

author = "Kihyun Kim and Geunwoo Jeng and Pilsu Kim and Jonghak Choi and Bolotnikov, {A. E.} and Camarda, {G. S.} and James, {R. B.}",

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T1 - Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors

AU - Kim, Kihyun

AU - Jeng, Geunwoo

AU - Kim, Pilsu

AU - Choi, Jonghak

AU - Bolotnikov, A. E.

AU - Camarda, G. S.

AU - James, R. B.

N1 - Funding Information: This work was supported by Korea University (K1222241) and the U.S. Department of Energy, Office of Defense Nonproliferation Research and Development, DNN R&D.

PY - 2013/8/14

Y1 - 2013/8/14

N2 - The detector performance and presence of Te secondary-phase defects distribution were investigated in CdMnTe (CMT) crystals prepared with different cooling rates. Detectors fabricated from fast-cooled CMT crystals exhibit a relatively poor detector performance, although IR transmission microscopy measurements show that the Te secondary-phase defects have a lower concentration and smaller size compared to slow-cooled crystals. Current deep-level transient spectroscopy (I-DLTS) measurements for both CMT detectors reveal the same trap levels, but there is a clear difference in the densities for the 0.26- and 0.42-eV traps for the two different cooling schemes. These two traps are probably attributed to Cd vacancies and Te anti-site defects, respectively. In addition, there is some likelihood that the traps are anti-correlated with respect to each other.

AB - The detector performance and presence of Te secondary-phase defects distribution were investigated in CdMnTe (CMT) crystals prepared with different cooling rates. Detectors fabricated from fast-cooled CMT crystals exhibit a relatively poor detector performance, although IR transmission microscopy measurements show that the Te secondary-phase defects have a lower concentration and smaller size compared to slow-cooled crystals. Current deep-level transient spectroscopy (I-DLTS) measurements for both CMT detectors reveal the same trap levels, but there is a clear difference in the densities for the 0.26- and 0.42-eV traps for the two different cooling schemes. These two traps are probably attributed to Cd vacancies and Te anti-site defects, respectively. In addition, there is some likelihood that the traps are anti-correlated with respect to each other.

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Influence of the cooling scheme on the performance and presence of carrier traps for CdMnTe detectors

Abstract

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