Influence of the density of crack-initiating defects on crack spacing for GaN films on Si(111) substrate

Bumjoon Kim, Samseok Jang, Junggeun Jhin, Seungjae Lee, Jong Hyeob Baek, Youngmoon Yu, Jaesang Lee, Dong Jin Byun

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This study examines the cracking of GaN films grown on Si(111) substrates, with particular focus on the effect of the density of crack-initiating defects (CIDs) on the crack spacing. The relationship between the CID density and crack spacing was examined by comparing specimens of the same thickness and under the same stress but with different CID density. The CID density in the GaN layer was changed by varying the ion-implanted area using patterning prior to metal-organic chemical vapor deposition (MOCVD) growth. The crack spacing decreased with increasing CID density, but this effect could not be explained by the previous model. Therefore, a CID-density related factor, nd, was newly introduced to explain the crack spacing and film stress relationship.

Original languageEnglish
Article number021003
JournalJapanese Journal of Applied Physics
Volume49
Issue number2 Part 1
DOIs
Publication statusPublished - 2010 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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